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參數(shù)資料
| 型號： | CXK5T8257BM-10LLX |
| 元件分類： | SRAM |
| 英文描述： | 32K X 8 STANDARD SRAM, 100 ns, PDSO28 |
| 封裝： | 0.450 INCH, PLASTIC, SOP-28 |
| 文件頁數(shù)： | 4/10頁 |
| 文件大?。?/td> | 147K |
| 代理商： | CXK5T8257BM-10LLX |
– 3 –
CXK5T8257BTM/BYM/BM
Electrical Characteristics
DC characteristics
(VCC = 2.7 to 3.6V, GND = 0V, Ta = –25 to +85°C)
Item
Symbol
Test Conditions
Min.
Typ.2
Max.
Unit
Input leakage current
Output leakage
current
Operating power
supply current
Average operating
current
Standby current
Output high
voltage
Output low
voltage
ILI
ILO
ICC1
ICC2
ISB1
ISB2
VOH
VOL
VIN = GND to VCC
CE = VIH
OE = VIH or WE = VIL
VI/O = GND to VCC
CE = VIL
VIN = VIH or VIL
IOUT = 0mA
Min. cycle
duty = 100%, IOUT = 0mA
CE
≥ VCC – 0.2V
CE = VIH
IOH = –2mA
IOL = 2.0mA
–0.5
—
2.4
—
0.5
2
354
35
7.0
3.5
—
0.7
—
0.4
—
0.9
183
18
—
0.12
0.06
—
A
mA
A
mA
V
2 V
CC
= 3.3V, Ta = 25°C
3 I
CC2
= 21mA for 3.3V operation (VCC = 3.3V ± 0.3V)
4 I
CC3
= 40mA for 3.3V operation (VCC = 3.3V ± 0.3V)
10LLX
12LLX
–25 to +85°C
–25 to +70°C
+25°C
DC Recommended Operating Conditions
(Ta = –25 to +85°C, GND = 0V)
1 V
IL
=–3.0V Min. for pulse width less than 50ns.
Supply voltage
Input high voltage
Input low voltage
Item
Symbol
Min.
VCC = 2.7 to 3.6V
VCC = 3.3V ± 0.3V
Typ.
Max.
Unit
VCC
VIH
VIL
2.7
2.4
–0.31
3.3
—
3.6
VCC + 0.3
0.4
Min.
Typ.
Max.
3.0
2.2
–0.31
3.3
—
3.6
VCC + 0.3
0.6
V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CXK5T8257BM-12LLX | 制造商:SONY 制造商全稱:Sony Corporation 功能描述:32768-word X 8-bit High Speed CMOS Static RAM |
| CXK5T8257BTM | 制造商:SONY 制造商全稱:Sony Corporation 功能描述:32768-word X 8-bit High Speed CMOS Static RAM |
| CXK5T8257BTM/BYM/BM-10LLX | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:32768-word x 8-bit High Speed CMOS Static RAM |
| CXK5T8257BTM/BYM/BM-12LLX | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:32768-word x 8-bit High Speed CMOS Static RAM |
| CXK5T8257BTM-10LLX | 制造商:SONY 制造商全稱:Sony Corporation 功能描述:32768-word X 8-bit High Speed CMOS Static RAM |
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