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參數(shù)資料
| 型號(hào)： | CTN639 |
| 英文描述： | TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 1A I(C) | TO-237 |
| 中文描述： | 晶體管|晶體管|叩| 80V的五（巴西）總裁| 1A條一（c）|至237 |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大小： | 48K |
| 代理商： | CTN639 |
Continental Device India Limited
Data Sheet
Page 2 of 4
ELECTRICAL CHARACTERISTICS
(Ta =25oC unless otherwise specified)
Characteristic
Collector-Emitter Voltage
635, 636
I
C
=10mA, I
B
=0
637, 638
639, 640
Symbol
BV
CEO
Min.
45
60
80
Typ.
Max.
Unit
V
V
V
-
-
-
-
-
-
Collector-Base Voltage
I
C
=100μA, I
E
=0
635, 636
637, 638
639, 640
BV
CBO
45
60
100
-
-
-
-
-
-
V
V
V
Emitter-Base Voltage
I
E
=10μA, I
C
=0
BV
EBO
5
-
-
V
Collector Cutoff Current
V
CB
=30V, I
E
=0
V
CB
=30V, I
E
=0, Ta=125°C
I
CBO
-
-
-
100
10
nA
μA
Base Emitter On Voltage
I
C
=500mA, V
CE
=2V
V
BE(on)
*
-
-
1.0 V
Collector-Emitter
(Sat) Voltage
I
C
=500mA, I
B
=50mA
V
CE(sat)
*
-
-
0.5 V
D.C. Current Gain
I
C
=5mA, V
CE
=2V
I
C
=150mA, V
CE
=2V*
635, 636
637, 638
639, 640
h
FE
25
40
40
25
-
-
-
-
-
160
160
I
C
=500mA, V
CE
=2V*
-
DYNAMIC CHARACTERISTICS
Input Capacitance
V
BE
=0.5V, I
C
=0,
f=1MHz
NPN
PNP
C
ib
-
-
50
110
-
-
pF
pF
Input Capacitance
V
CB
=10V, I
C
=0,
f=1MHz
NPN
PNP
C
ob
-
-
7
9
-
-
pF
pF
Transition Frequency
I
C
=10mA, V
CE
=5V,
f=35MHz
NPN
PNP
f
T
-
-
130
50
-
-
MHz
MHz
*Pulse Test: Pulse width
≤
300μs, Duty cycle
≤
2%.
CTN635, CTN637, CTN639
CTN636, CTN638, CTN640
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