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參數(shù)資料
| 型號(hào)： | CSD545G |
| 英文描述： | TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 1A I(C) | TO-92 |
| 中文描述： | 晶體管|晶體管|叩| 25V的五（巴西）總裁| 1A條一（c）|至92 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 157K |
| 代理商： | CSD545G |
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
NPN SILICON EPITAXIAL TRANSISTOR
CSD545
TO-92
Plastic Package
Low Frequencty Power Amplifier And Convertor Stage Applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25oC unless specified otherwise)
DESCRIPTION
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current Continuous
Peak
Colector Power Dissipation
Operating And Storage Junction
Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25oC unless specified otherwise)
DESCRIPTION
Collector Emitter Breakdown Voltage
SYMBOL
BV
CEO
BV
CBO
BV
EBO
I
C
I
CM
P
D
T
j
, T
stg
VALUE
25
25
5
1
1.5
600
-55 to +150
UNIT
V
V
V
A
A
mW
oC
SYMBOL TEST CONDITION
BV
CEO
I
C
=1mA,I
B
=0
MIN
25
TYP
MAX
UNIT
V
Collector Base Breakdown Voltage
BV
CBO
I
C
=10
μ
A,I
B
=0
25
V
Emitter Base Breakdown Voltage
BV
EBO
I
E
=10
μ
A, I
C
=0
5
V
Collector Cut off Current
Emitter Cut off Current
DC Current Gain
I
CBO
I
EBO
h
FE (1)
h
FE (2)
*
V
CB
=20V, I
E
= 0
V
BE
=4V, I
E
= 0
V
CE
=2V,I
C
=50mA
V
CE
=2V,I
C
=1A
1.0
1.0
560
μ
A
μ
A
60
30
Base Emitter Saturation Voltage
Collector Emitter Saturation
Voltage
V
BE(sat)
* I
C
=500mA,I
B
=50mA
V
CE(sat)
* I
C
=500mA,I
B
=50mA
0.85
0.1
1.2
0.3
V
V
ELECTRICAL CHARACTERISTICS (Ta=25oC unless specified otherwise)
DESCRIPTION
DYNAMIC CHARACTERISTICS
SYMBOL TEST CONDITION
MIN
TYP
MAX
UNIT
Transition Frequency
Collector Output Capacitance
f
T
I
C
=50mA, V
CE
=10V
I
E
=0, V
CB
=10V
f=1MHz
180
15
MHz
pF
C
ob
CLASSIFICATION
h
FE
(1)
*Pulse Condition: Width < 300
μ
s, Duty Cycle < 2%.
D E F G
60-120 100-200 160-320 280-560
IS/ISO 9002
Lic# QSC/L- 000019.2
Continental Device India Limited
Data Sheet
Page 1 of 3
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