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參數(shù)資料
| 型號(hào)： | CSC4217D |
| 英文描述： | TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 200MA I(C) | TO-126 |
| 中文描述： | 晶體管|晶體管|叩| 300V五（巴西）總裁| 200mA的一（c）|至126 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 49K |
| 代理商： | CSC4217D |
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
NPN EPITAXIAL SILICON POWER TRANSISTOR
CSC4212
TO-126
Plastic Package
For Colour TV Horizontal Deflection Driver
ABSOLUTE MAXIMUM RATINGS (T
c
=25oC)
DESCRIPTION
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Peak Collector Current
Collector Current
Total Power Dissipation
SYMBOL
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
UNIT
V
V
V
mA
mA
W
W
oC
oC
Junction Temperature
Storage Temperature
T
j
T
stg
* Without heat sink
**With a 100x100x2mm A1 heat sink
ELECTRICAL CHARACTERISTICS (T
c
=25oC unless specified otherwise )
DESCRIPTION
Collector Cut off Current
Emitter Cut off Current
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
DC Current Gain
Collector Emitter Saturation Voltage
SYMBOL
I
CBO
I
EBO
V
CBO
V
CEO
V
EBO
h
FE
V
CE (sat)
TEST CONDITION
V
CB
=200V, I
E
=0
V
EB
=5V, I
C
=0
I
C
=100
μ
A, I
E
=0
I
C
=5mA, I
B
=0
I
E
=100
μ
A, I
C
=0
I
C
=10mA, V
CE
=10V
I
C
=50mA, I
B
=5mA
MIN
TYP
MAX
2.0
2.0
UNIT
μ
A
μ
A
V
V
V
350
300
7.5
40
250
1.0
V
Dynamic Characteristics
Transition Frequency
f
T
I
C
=10mA, V
CB
=30V,
f=200MHz
I
E
=0,V
CB
=50V, f=0.1MHz
50
MHz
Output Capacitance
C
ob
4.5
pF
150
- 55 to +150
Value
350
300
7.5
400
200
1.2*
5.0**
IS/ISO 9002
Lic# QSC/L- 000019.3
B
C
E
Continental Device India Limited
Data Sheet
Page 1 of 3
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