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參數(shù)資料
| 型號： | CSC2712G |
| 廠商： | Continental Device India Limited |
| 英文描述： | SILICON PLANAR EPITAXIAL TRANSISTOR |
| 中文描述： | 硅外延平面晶體管 |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 38K |
| 代理商： | CSC2712G |
Continental Device India Limited
Data Sheet
Page 2 of 3
RATINGS
(at T
A
= 25°C unless otherwise specified)
Limiting values
Collector-base voltage (open emitter)
Collector-emitter voltage (open base)
Emitter-base voltage (open collector)
Collector current (d.c.)
Base current
Total power dissipation at T
amb
= 25°C
Junction temperature
Storage temperature
V
CBO
V
CEO
V
EBO
I
C
I
B
P
tot
T
j
Tstg
max.
max.
max.
max.
max.
max.
max.
–50 to +150 ° C
60 V
50 V
5 V
150 mA
30 mA
150 mW
150 ° C
CHARACTERISTICS
(at T
A
= 25°C unless otherwise specified)
Collector cut-off current
I
E
= 0; V
CB
= 60 V
I
CBO
max.
100 nA
Emitter cut-off current
I
C
= 0; V
EB
= 5 V
I
EBO
max.
100 nA
Saturation voltage
I
C
= 100 mA; I
B
= 10 mA
V
CEsat
max.
250 mV
D.C. current gain
I
C
= 2 mA; V
CE
= 6 V
h
FE
min.
max.
70
700
Y
min.
max.
120
240
GR(G)
min.
max.
200
400
BL(L)
min.
max.
350
700
Transition frequency
I
C
= 1 mA; V
CE
= 10 V
f
T
min.
80 MHz
Noise figure at R
g
= 10 k
W
V
CE
= 6 V; I
C
= 0.1 mA
f = 1 kHz
N
F
max.
10 dB
CSC2712
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相關代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CSC2712GR | 制造商:CDIL 制造商全稱:Continental Device India Limited 功能描述:SILICON PLANAR EPITAXIAL TRANSISTOR |
| CSC2712GRG | 制造商:CDIL 制造商全稱:Continental Device India Limited 功能描述:SILICON PLANAR EPITAXIAL TRANSISTOR |
| CSC2712L | 制造商:CDIL 制造商全稱:Continental Device India Limited 功能描述:SILICON PLANAR EPITAXIAL TRANSISTOR |
| CSC2712Y | 制造商:CDIL 制造商全稱:Continental Device India Limited 功能描述:SILICON PLANAR EPITAXIAL TRANSISTOR |
| CSC2713 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 100MA I(C) | SOT-23 |
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