參數(shù)資料
型號(hào): CSC1740O
廠商: Continental Device India Limited
英文描述: NPN EPITAXIAL SILICON PLANAR TRANSISTOR
中文描述: npn型外延硅平面晶體管
文件頁數(shù): 1/3頁
文件大?。?/td> 153K
代理商: CSC1740O
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
NPN EPITAXIAL SILICON PLANAR TRANSISTOR
CSC 1740
TO-92
Plastic Package
General Small Signal Amplifier
ABSOLUTE MAXIMUM RATINGS (Ta=25oC unless specified otherwise)
DESCRIPTION
Collector Emitter Voltage
SYMBOL
BV
CEO
VALUE
50(ORS)
40(E)
60(ORS)
50(E)
5
150
300
-55 to +150
UNIT
V
Collector Base Voltage
BV
CBO
V
Emitter Base Voltage
Collector Current (DC)
Collector Power Dissipation
Operating And Storage Junction
Temperature Range
BV
EBO
I
C
P
C
T
j
, T
stg
V
mA
mW
oC
ELECTRICAL CHARACTERISTICS (Ta=25oC unless specified otherwise)
DESCRIPTION
Collector Emitter Voltage
SYMBOL TEST CONDITION
V
CEO
I
C
=1mA,I
B
=0
MIN
TYP
MAX
UNIT
V
V
50(ORS)
40(E)
Collector Base Voltage
V
CBO
I
C
=50
μ
A,I
E
=0
60(ORS)
50(E)
V
V
Emitter Base Voltage
Collector Cut off Current
Emitter Cut off Current
DC Current Gain
Collector Emitter Saturation
Voltage
V
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
I
E
=50
μ
A, I
C
=0
V
CB
=30V, I
E
= 0
V
BE
=4V, I
C
= 0
V
CE
=6V,I
C
=0.1mA
I
C
=50mA,I
B
=5.0mA
5
0.5
0.5
μ
A
μ
A
μ
A
V
120
820
0.4
DYNAMIC CHARACTERISTICS
Transition Frequency
f
T
I
C
=2.0mA, V
CE
=12V
f=100MHz
I
E
=0, V
CB
=12V
f=1MHz
180
MHz
Collector Output Capacitance
C
ob
3.5
pF
* hFE CLASSIFICATION :
O : 120-270 R : 180-390 S: 270-560 E:390-820
IS/ISO 9002
Lic# QSC/L- 000019.2
Continental Device India Limited
Data Sheet
Page 1 of 3
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CSC1740R 制造商:CDIL 制造商全稱:Continental Device India Limited 功能描述:NPN EPITAXIAL SILICON PLANAR TRANSISTOR
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CSC1815BL 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | TO-92
CSC1815GR 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 150MA I(C) | TO-92