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參數(shù)資料
| 型號(hào)： | CSA968Y |
| 英文描述： | TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 1.5A I(C) | TO-220AB |
| 中文描述： | 晶體管|晶體管|進(jìn)步黨| 160V五（巴西）總裁| 1.5AI（丙）| TO - 220AB現(xiàn)有 |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 64K |
| 代理商： | CSA968Y |
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
PNP SILICON PLANAR EPITAXIAL TRANSISTOR
CSA966
TO-92
Plastic Package
Complementary CSC2236
Audio Power Amplifier Applications
ABSOLUTE MAXIMUM RATINGS (Ta=25oC unless specified otherwise)
DESCRIPTION
SYMBOL
VALUE
UNIT
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current
Emitter Current
Collector Power Dissipation
Operating And Storage Junction
Temperature Range
V
CEO
V
CBO
V
EBO
I
C
I
E
P
C
T
j
, T
stg
30
30
5
1.5
1.5
900
V
V
V
A
A
mW
oC
-55 to +150
ELECTRICAL CHARACTERISTICS (Ta=25oC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
min
typ
max
UNIT
Collector Cut off Current
Emitter Cut off Current
Collector Emitter Voltage
Emitter Base Voltage
DC Current Gain
Collector Emitter Saturation
Voltage
Base Emitter Voltage
I
CBO
I
EBO
BV
CEO
V
EBO
h
FE
*
V
CE(sat)
V
CB
=30V, I
E
= 0
V
EB
=5V, I
C
= 0
I
C
=10mA, I
B
=0
I
E
=1mA, I
C
=0
V
CE
=2V, I
C
=500mA
I
C
=1.5A, I
B
=0.03A
-
-
100
100
-
-
320
2.0
nA
nA
V
V
30
5
100
-
V
V
BE
V
CE
=2V, I
C
=500mA
-
1.0
V
DYNAMIC CHARACTERISTICS
Transition Frequency
f
T
I
C
=500mA, V
CE
=2V
I
E
=0,V
CB
=10V,f=1MHz
O
100 - 200
-
120
-
MHz
Collector Output Capacitance
Classification
h
FE
*
C
ob
-
Y
30
pF
160 - 320
IS/ISO 9002
Lic# QSC/L- 000019.2
Continental Device India Limited
Data Sheet
Page 1 of 3
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