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參數(shù)資料
| 型號： | CSA708Y |
| 廠商： | Continental Device India Limited |
| 英文描述： | TRANSISTOR | BJT | PNP | 60V V(BR)CEO | TO-92 |
| 中文描述： | 晶體管|晶體管|進(jìn)步黨| 60V的五（巴西）總裁|到92 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 59K |
| 代理商： | CSA708Y |
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
NPN/PNP EPITAXIAL PLANAR SILICON TRANSISTORS
CSC1008 NPN
CSA708 PNP
TO-92
CBE
Low Frequency Amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified)
DESCRIPTION
Collector -Base Voltage
Collector -Emitter Voltage
Emitter -Base Voltage
Collector Current
Collector Dissipation
Operating And Storage Junction
Temperature Range
SYMBOL
VCBO
VCEO
VEBO
IC
PC
Tj, Tstg
VALUE
80
60
8.0
700
800
-55 to +150
UNIT
V
V
V
mA
mW
deg C
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
Collector -Base Voltage
Collector -Emitter Voltage
Emitter-Base Voltage
Collector-Cut off Current
Emitter-Cut off Current
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
SYMBOL
VCBO
VCEO
VEBO
ICBO
IEBO
hFE*
VCE(Sat)* IC=500mA,IB=50mA
VBE(Sat) * IC=500mA,IB=50mA
TEST CONDITION
IC=100uA.IE=0
IC=10mA,IB=0
IE=100uA, IC=0
VCB=60V, IE=0
VEB=5V, IC=0
IC=50mA,VCE=2V
CSC1008
>80
>60
>8.0
<100
<100
40-400
<0.4
<1.1
CSA708
>80
>60
>8.0
<100
<100
40-240
<0.7
<1.1
UNIT
V
V
V
nA
nA
V
V
DYNAMIC CHARACTERISTICS
Transition Frequency
Out-Put Capacitance
ft
Cob
IC=50mA, VCE=10V
VCB=10V, IE=0
f=1MHz
>30
typ8
typ50
typ13
MHz
pF
*hFE CLASSIFICATION CSC1008
CSA708
*Pulse Test: PW=350us, Duty Cycle=2%
R : 40 - 80
R : 40 - 80
O : 70 -140
O : 70 -140
Y : 120-240
Y : 120-240
G : 200-400
IS/ISO 9002
Lic# QSC/L- 000019.2
IS / IECQC 700000
IS / IECQC 750100
Continental Device India Limited
Data Sheet
Page 1 of 3
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| CSA709 | 制造商:CDIL 制造商全稱:Continental Device India Limited 功能描述:PNP/NPN EPITAXIAL PLANAR SILICON TRANSISTORS |
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