參數(shù)資料
型號： CRD13003BC
廠商： Continental Device India Limited
英文描述： NPN SILICON POWER TRANSISTOR
中文描述： NPN硅功率晶體管
文件頁數(shù)： 2/5頁
文件大?。?/td> 90K
代理商： CRD13003BC
NPN SILICON POWER TRANSISTOR
CRD13003BC
(9AC)
(Tin Finish Part)
LEAD FREE
TO-126
Plastic Package
ELECTRICAL CHARACTERISTICS (T
a
=25oC unless specified otherwise)
DESCRIPTION
Collector Base Voltage
Collector Emitter (sus) Voltage
Collector Cut Off Current
SYMBOL
V
CBO
**V
CEO (sus)
I
CBO
TEST CONDITION
I
C
=1mA, I
E
=0
I
C
=10mA, I
B
=0
V
CB
=700V
,
I
E
=0
V
CB
=700V
,
I
E
=0, T
c
=100oC
V
EB
=9V, I
C
=0
I
C
=0.5A, V
CE
=5V
I
C
=2A, V
CE
=5V
I
C
=0.5A, I
B
=0.1A
I
C
=1A, I
B
=0.25A
I
C
=1.5A, I
B
=0.5A
I
C
=1A, I
B
=0.25A,T
c
=100oC
I
C
=0.5A, I
B
=0.1A
I
C
=1A, I
B
=0.25A
I
C
=1A, I
B
=0.25A, T
c
=100oC
MIN
700
400
-
TYP
-
-
-
MAX
-
-
1.0
5.0
1.0
22
25
0.5
1.0
2.5
1.0
1.0
1.2
1.1
UNIT
V
V
mA
mA
mA
Emitter Cut Off Current
DC Current Gain
I
EBO
**h
FE
-
-
-
-
-
-
-
-
-
-
-
15
4.0
-
-
-
-
-
-
-
Collector Emitter Saturation Voltage
**V
CE (sat)
V
V
V
V
V
V
V
Base Emitter Saturation Voltage
**V
BE (sat)
DYNAMIC CHARACTERISTICS
DESCRIPTION
SYMBOL
TEST CONDITION
I
C
=100mA, V
CE
=10V,
f=1MHz
V
CB
=10V, f=0.1MHz
MIN
TYP
MAX
UNIT
Current Gain Bandwidth Product
f
T
4.0
-
-
MHz
Output Capacitance
C
ob
-
21
-
pF
SWITCHING TIME
DESCRIPTION
Turn on Time
Fall Time
Storage Time
SYMBOL
t
on
t
f
t
stg
TEST CONDITION
V
CC
=125V
I
B1
=0.2A, I
B2
=0.2A
I
C
=1A
MIN
-
-
-
TYP
-
-
-
MAX
1.1
0.7
4.0
UNIT
μ
s
μ
s
μ
s
MARKING
C = CDIL Logo
P = Plant Code, N for Delhi
X = Year of Manufacturer
YY = Week Code
**Pulse Test:- PW=300
m
s, Duty Cycle=2%
CRD13003BC(9AC)Rev120705E
'T' stands for Tin finish leads
PXYY
For Lead Free Lead Finish
CRD1
3003
BC
B
C
E
Continental Device India Limited
Data Sheet
Page 2 of 5
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