參數(shù)資料
型號: CRCW12061001F100
廠商: 飛思卡爾半導(dǎo)體(中國)有限公司
英文描述: RF LDMOS Wideband Integrated Power Amplifiers
中文描述: 射頻LDMOS寬帶集成功率放大器
文件頁數(shù): 10/16頁
文件大小: 596K
代理商: CRCW12061001F100
10
RF Device Data
Freescale Semiconductor
MW4IC001NR4 MW4IC001MR4
Figure 22. Series Equivalent Source and Load Impedance
f
MHz
Z
source
Z
load
860
865
870
27.853 + j5.908
29.458 + j6.285
28.617 + j6.078
15.492 + j63.669
15.592 + j68.687
15.788 + j69.799
V
DD
= 28 V, I
DQ
= 14 mA, P
out
= 0.9 W PEP
875
880
885
30.306 + j6.422
32.194 + j6.660
31.223 + j6.567
15.835 + j70.863
15.975 + j71.920
16.094 + j73.091
890
33.228 + j6.656
16.286 + j74.159
895
34.293 + j6.624
16.344 + j75.236
900
35.424 + j6.508
16.628 + j76.283
Z
source
=
Test circuit impedance as measured from
gate to ground.
Z
load
=
Test circuit impedance as measured
from drain to ground.
Zsource
Zload
Input
Matching
Network
Device
Under Test
Output
Matching
Network
f =860 MHz
Z
source
f = 900 MHz
Z
load
f = 900 MHz
f = 860 MHz
Z
o
= 50
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