參數(shù)資料
型號: CMK2-67025V-20
廠商: ATMEL CORP
元件分類: SRAM
英文描述: 8K X 16 DUAL-PORT SRAM, 20 ns, PQFP84
封裝: 0.050 INCH, MQFP-84
文件頁數(shù): 9/23頁
文件大?。?/td> 257K
代理商: CMK2-67025V-20
M 67025
MATRA MHS
Rev. D (29/09/95)
17
AC Electrical Characteristics
over the Full Operating Temperature and Supply Voltage Range
WRITE
CYCLE
PARAMETER
M
67025–20
M
67025–25
M
67025–30
M
67025–35
M
67025–45
M
67025–55
UNIT
CYCLE
PARAMETER
Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. Min. Max.
UNIT
BUSY TIMING (For Master 67025 only)
tBAA
BUSY Access time
to address
20
25
30
35
35
45
ns
tBDA
BUSY Disable time
to address
15
20
25
30
30
40
ns
tBAC
BUSY Access time
to Chip Select
15
20
25
30
30
40
ns
tBDC
BUSY Disable time
to Chip Select
13
17
20
25
25
35
ns
tWDD
Write Pulse to data Delay
(1)
45
50
55
60
70
80
ns
tDDD
Write data valid to read
data delay (1)
35
35
40
45
55
65
ns
tAPS
Arbitration priority
set–up time (2)
5
5
5
5
5
5
ns
tBDD
BUSY disable to valid
data
Note 3
Note 3
Note 3
Note 3
Note 3
Note 3
ns
BUSY TIMING (For Slave 67025 only)
tWB
Write to BUSY input (4)
0
0
0
0
0
0
ns
tWH
Write hold after BUSY
(5)
15
17
20
25
25
25
ns
tWDD
Write pulse to data delay
(6)
45
50
55
60
70
80
ns
tDDD
Write data valid to read
data delay (6)
35
35
40
45
55
65
ns
Notes :
1. Port-to-port delay through RAM cells from writing port to reading port, refer to “Timing Waveform of Read with BUSY (For
Master 67025 only).
2. To ensure that the earlier of the two ports wins.
3. tBDD is a calculated parameter and is the greater of 0, tWDD – tWP (actual) ot tDDD – tDW (actual).
4. To ensure that the write cycle is inhibited during contention.
5. To ensure that a write cycle is completed after contention.
6. Port-to-port delay through RAM cells from writing port to reading port, refer to “Timing Waveforms of Read with Port-to-port
delay (For Slave, 67025 only)”.
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