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參數(shù)資料
| 型號： | CMBT9013I |
| 廠商： | Continental Device India Limited |
| 英文描述： | NPN silicon planar transistor |
| 中文描述： | NPN硅平面晶體管 |
| 文件頁數(shù)： | 3/3頁 |
| 文件大?。?/td> | 75K |
| 代理商： | CMBT9013I |
Notes
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Data Sheet
Page 3 of 3
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CMBT918 | TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 350MA I(C) | TO-236AA |
| CMBT9013H | npn silicon planar transistor |
| CMBTA56 | TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 500MA I(C) | TO-236AA |
| CMBTA05 | TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 500MA I(C) | TO-236AA |
| CMBTA06 | TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 500MA I(C) | TO-236AA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CMBT9014 | 功能描述:兩極晶體管 - BJT Si Planar Trans NPN, 30V, .1A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| CMBT9014B | 制造商:CDIL 制造商全稱:Continental Device India Limited 功能描述:NPN SILICON PLANAR TRANSISTOR |
| CMBT9014C | 制造商:CDIL 制造商全稱:Continental Device India Limited 功能描述:NPN SILICON PLANAR TRANSISTOR |
| CMBT9014D | 制造商:CDIL 制造商全稱:Continental Device India Limited 功能描述:NPN SILICON PLANAR TRANSISTOR |
| CMBT9014-T | 功能描述:兩極晶體管 - BJT NPN Gen Pur RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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