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參數(shù)資料
| 型號： | CLX30 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | HiRel X-Band GaAs Power-MESFET |
| 中文描述： | 伊雷爾X波段砷化鎵功率場效應(yīng)管 |
| 文件頁數(shù)： | 3/9頁 |
| 文件大?。?/td> | 640K |
| 代理商： | CLX30 |
CLX30
S emiconductor Group
3 of 10
Draft D, S eptember 99
Electrical Characteristics
(at T
A
=25°C; unless otherwise specified)
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Drain-source saturation current
V
DS
= 2 V, V
GS
= 0 V
I
Dss
360
600
840
mA
Gate threshold voltage
V
DS
= 3 V, I
D
= 24 mA
-V
Gth
1.2
2.2
3.2
V
Drain current at pinch-off, low V
DS
V
DS
= 3 V, V
GS
= -3.5 V
I
Dp3
-
-
120
μA
Gate current at pinch-off, low V
DS
V
DS
= 3 V, V
GS
= -3.5 V
-I
Gp3
-
-
48
μA
Drain current at pinch-off, high V
DS
V
DS
= 9.5 V, V
GS
= -3.5 V
I
Dp9.5
-
-
1200
μA
Gate current at pinch-off, high V
DS
V
DS
= 9.5 V, V
GS
= -3.5 V
-I
Gp9.5
-
-
480
μA
Transconductance
V
DS
= 3 V, I
D
= 240 mA
g
m
260
320
-
mS
Thermal resistance
J unction to soldering point
V
DS
= 8 V, I
D
= 240 mA, T
s
= +25°C
R
th J S
-
20
-
K/W
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