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參數(shù)資料
| 型號： | CLP30-200B1RL |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | OVERVOLTAGE & OVERCURRENT PROTECTION FOR TELECOM LINE |
| 中文描述： | 過電壓 |
| 文件頁數(shù)： | 8/11頁 |
| 文件大?。?/td> | 138K |
| 代理商： | CLP30-200B1RL |
CLP30-200B1
8/11
Symbol
I
PP
Parameter
Value
Unit
Line to GND peak pulse current
10/1000
μ
s (open circuit voltage wave shape 10/1000
μ
s)
5/310
μ
s (open circuit voltage wave shape 10/700
μ
s)
Non repetitive surge peak on-state current
F = 50 Hz
30
45
8.5
4.5
3.5
A
I
TSM
t
p
= 10 ms
t
p
= 200 ms
t
p
= 1 s
A
T
stg
T
j
T
L
Storage temperature range
Maximum junction temperature
Lead temperature for soldering during 10 s.
-40 to +150
150
260
°C
°
C
ABSOLUTE MAXIMUM RATINGS
(R
SENSE
= 3
,T
amb
= 25°C)
Symbol
Parameter
Test condtions
Min
Max
Unit
I
LGL
Line to GND leakage current
V
LG
= 200 V
Measured between TIP (or
RING) and GND
10
μ
A
V
LG
Line to GND operating voltage
200
V
V
SWON
Line to GND voltage at SW1 or
SW2 switching-on
Measuredat50HzbetweenTIPL
(orRINGL)andGND,onecycle
290
V
I
SWOFF
Line to GND negative current
at SW1 or SW2 switching-off
Refer to test circuit fig 9
150
mA
I
SWON
Line current at SW1 or SW2
switching-on
Positive surge
Negative surge
220
370
320
470
mA
C
Line to GND capacitance
V
LG
= 0V
F = 1MHz
V
OSC
= 200mV
RMS
100
pF
ELECTRICAL CHARACTERISTICS
(R
SENSE
= 3
, and T
amb
= 25 °C)
Symbol
Parameter
Value
Unit
R
th(j-a)
Junction to ambient
170
°C/W
THERMAL RESISTANCE
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