參數(shù)資料
型號: CLP200M
廠商: 意法半導(dǎo)體
英文描述: OVERVOLTAGE AND OVERCURRENT PROTECTION FOR TELECOM LINE
中文描述: 過壓和過流保護(hù)的電信線路保護(hù)
文件頁數(shù): 13/21頁
文件大?。?/td> 232K
代理商: CLP200M
Symbol
I
PP
Parameter
TestConditions
10/1000
μ
s (opencircuit voltage
wave shape10/1000
μ
s)
5/310
μ
s (opencircuit voltage
wave shape10/700
μ
s)
V
RMS
= 300V,R = 600
t =200ms
V
RMS
= 220V,R = 10
(failurestatus threshold)
t =200 ms
V
RMS
= 220V,R = 600
t =15 mn
Value
100
Unit
A
Line to GNDpeak surge
current
130
A
I
TSM
Mainspowerinduction
current
Mainspowercontact current
0.5
A
22
A
0.30
A
T
stg
T
j
T
L
Storagetemperaturerange
Maximumjunctiontemperature
Maximumleadtemperaturefor solderingduring10 s
- 40 to + 150
150
260
°
C
°
C
ABSOLUTEMAXIMUM RATINGS
(R
SENSE
= 4
, andT
amb
= 25
°
C)
Symbol
Parameter
TestConditions
Value
Unit
Min.
Max.
10
I
LGL
Line to GNDleakage
current
.
V
LG
= 200V
.
MeasuredbetweenTIP
(or RING)and GND
.
I
LG
= 1 mA
.
MeasuredbetweenTIP
(or RING)and GND
.
Measuredat 50 Hz between
TIPL(or RINGL)and GND
.
Referto test circuit page 14
μ
A
V
ref
Overvoltageinternal
reference
215
V
V
SWON
Line to GNDvoltageat SW1
or SW2switching-on
Line to GNDcurrent at SW1
or SW2switching-off
Line currentat SW1or SW2
switching-on
Line to GNDcapacitance
290
V
I
SWOFF
150
mA
I
SWON
.
Positivepulse
.
Negativepulse
.
V
LG
= -1V + 1V
RMS
.
F = 1 MHz
180
220
280
320
200
mA
C
pF
ELECTRICALCHARACTERISTICS
(R
SENSE
= 4
, andT
amb
= 25
°
C)
CLP200M
13/21
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