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參數(shù)資料
| 型號(hào)： | CL100 |
| 廠商： | Continental Device India Limited |
| 英文描述： | NPN SILICON PLANAR TRANSISTORS |
| 中文描述： | NPN硅平面型晶體管 |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大小： | 47K |
| 代理商： | CL100 |
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
NPN SILICON PLANAR TRANSISTORS
CL 100, A, B
CK 100, A, B
TO-39
Metal Can Package
CL100 And CK 100 Are Medium Power Transistors Suitable For Awide Range
Of Medium Voltage And Current Amplifier Applications.
Complementary CK100, A, B
ABSOLUTE MAXIMUM RATINGS (Ta=25oC unless specified otherwise)
DESCRIPTION
Collector -Emitter Voltage
Collector -Base Voltage
Emitter Base Voltage
Collector Current-Continuous
Power Dissipation @ Ta=25oC
Derate above 25oC
Total device dissipation @ Tc=25oC
Derate above 25oC
Operating And Storage Junction
Temperature Range
SYMBOL
V
CER
V
CBO
V
EBO
I
CM
P
D
VALUE
50
60
5
1
800
5.33
3
20
-55 to +175
UNITS
V
V
V
A
mW
mW /°C
W
mW /°C
°C
P
D
T
j
, T
stg
ELECTRICAL CHARACTERISTICS (Ta=25oC unless specified otherwise)
DESCRIPTION
Collector Emitter Breakdown Voltage
Collector Base Breakdown Voltage
Emitter Base Breakdown Voltage
Collector Leakage Current
Emitter Leakage Current
DC Current Gain
Base Emitter On Voltage
Collector Emitter (Sat) Voltage
SYMBOL TEST CONDITION
BV
CER
* I
C
=10mA, I
B
=0
BV
CBO
I
C
=100
μ
A, I
E
=0
BV
EBO
I
E
=100
μ
A, I
C
=0
I
CBO
V
CB
=40V, I
E
=0
I
EBO
V
EB
=4V, I
E
=0
h
FE
*
I
C
=150mA,V
CE
=10V
V
BE
(on)* V
CE
=1V, I
C
=150mA,
V
CE
(sat)* I
C
=150mA,I
B
=15mA
MIN
50
60
5
TYP
MAX
UNIT
V
V
V
nA
μ
A
50
1
300
0.9
0.6
40
V
V
CLASSIFICATION
HFE
A
B
40-120
100-300
*Pulse Condition : PW <300us, Duty Cycle < 2%
IS/ISO 9002
Lic# QSC/L- 000019.2
Continental Device India Limited
Data Sheet
Page 1 of 3
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| CL100A | NPN SILICON PLANAR TRANSISTORS |
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