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參數(shù)資料
| 型號(hào)： | CGY2023G |
| 英文描述： | Microwave/Millimeter Wave Amplifier |
| 中文描述： | 微波/毫米波放大器 |
| 文件頁(yè)數(shù)： | 5/16頁(yè) |
| 文件大小： | 98K |
| 代理商： | CGY2023G |
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2000 Oct 16
5
Philips Semiconductors
Product specification
GSM/DCS/PCS power amplifier
CGY2014TT
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1.
The total power dissipation is measured under GSM pulse conditions in a good thermal environment;
see “Application Note CTT0003”
THERMAL CHARACTERISTICS
Note
1.
This thermal resistance is measured under GSM pulse conditions in a good thermal environment;
see “Application Note CTT0003”
DC CHARACTERISTICS
V
DD
= 3.5 V; T
amb
= 25
°
C; general operating conditions applied; peak current values measured during burst; unless
otherwise specified.
Notes
1.
2.
3.
The supply circuit includes a (drain) MOS switch with R
DSon
= 40 m
. The battery voltage is 3.6 V (typical value).
No RF input signal or P
i(LB)
<
30 dBm; V
DD
= 1 V.
No RF input signal or P
i(HB)
<
30 dBm; V
DD
= 1 V.
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
V
DD
T
j(max)
T
stg
P
tot
P
i(LB)
P
i(HB)
positive supply voltage
maximum operating junction temperature
storage temperature
total power dissipation
GSM input power
DCS/PCS input power
5.2
150
150
2.0
10
10
V
°
C
°
C
W
dBm
dBm
note 1
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th(j-c)
thermal resistance from junction to case
note 1
30
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Supplies: pins V
DD1LB
, V
DD2LB
, RFO/V
DD3LB
, V
DD1HB
, V
DD2HB
and RFO/V
DD3HB
V
DD
I
DD(LB)
positive supply voltage
GSM positive peak supply current
note 1
P
i(LB)
= 0 dBm
note 2
P
i(HB)
= 3 dBm
note 3
0
0.5
0.25
3.5
2
1.5
1.5
1
4.2
3
2
V
A
A
A
A
I
DD(HB)
DCS/PCS positive peak supply current
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