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參數(shù)資料
| 型號： | CGY2014TT |
| 英文描述： | MICROWAVE/MILLIMETER WAVE AMPLIFIER|DUAL|GAAS|TSSOP|20PIN|PLASTIC |
| 中文描述： | 微波/毫米波放大器|雙|公認(rèn)審計(jì)| TSSOP封裝| 20針|塑料 |
| 文件頁數(shù)： | 2/16頁 |
| 文件大小： | 98K |
| 代理商： | CGY2014TT |
2000 Oct 16
2
Philips Semiconductors
Product specification
GSM/DCS/PCS power amplifier
CGY2014TT
FEATURES
Operating at 3.6 V battery supply
Power Amplifier (PA) output power:
35 dBm in GSM band and 32.5 dBm in DCS/PCS band
Input power: 0 dBm in GSM band and 3 dBm in
DCS/PCS band
Wide operating temperature range from
20 to +85
°
C
HTSSOP20 exposed die pad package.
APPLICATIONS
Dual-band systems: Low Band (LB) from
880 to 915 MHz hand-held transceivers for E-GSM and
High Band (HB) from 1710 to 1910 MHz for DCS/PCS
applications.
GENERAL DESCRIPTION
The CGY2014TT is a dual-band GSM/DCS/PCS GaAs
Monolithic Microwave Integrated Circuit (MMIC) power
amplifier. The circuit is specifically designed to operate at
3.6 V battery supply voltage.
The power amplifier requires only a 30 dB harmonic
low-pass filter to comply with the transmit spurious
specification.
The voltages applied on pins V
DD
(drain) control the power
of the power amplifier and permit to switch it off.
QUICK REFERENCE DATA
ORDERING INFORMATION
SYMBOL
PARAMETER
MIN.
34.5
32
20
TYP.
MAX.
UNIT
V
DD
I
DD(LB)
P
o(LB)(max)
I
DD(HB)
P
o(HB)(max)
T
amb
positive supply voltage
GSM positive peak supply current
maximum output power in GSM band
DCS/PCS positive peak supply current
maximum output power in DCS/PCS band
ambient temperature
3.5
2
35
1.5
32.5
4.2
+85
V
A
dBm
A
dBm
°
C
TYPE
NUMBER
PACKAGE
NAME
DESCRIPTION
VERSION
CGY2014TT
HTSSOP20
plastic, heatsink thin shrink small outline package; 20 leads;
body width 4.4 mm
SOT527-1
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