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參數(shù)資料
| 型號： | CGY1032 |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 功率放大器 |
| 英文描述： | 1 GHz, 32 dB gain GaAs push-pull amplifier |
| 封裝： | CGY1032<SOT115J|<<<1<Always Pb-free,; |
| 文件頁數(shù)： | 5/6頁 |
| 文件大?。?/td> | 91K |
| 代理商： | CGY1032 |
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5 - 6
VGE = 15V
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0
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125
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ICE, Collector to Emitter Current (A)
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Turn-On Delay Time vs Collector Current
Tj = 125°C
VCE = 400V
RG = 2.7
VGE=15V,
TJ=25°C
VGE=15V,
TJ=125°C
50
75
100
125
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0
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ICE, Collector to Emitter Current (A)
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Turn-Off Delay Time vs Collector Current
VCE = 400V
RG = 2.7
VGE=15V,
TJ=125°C
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10
20
30
40
50
60
0
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100
125
150
ICE, Collector to Emitter Current (A)
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Current Rise Time vs Collector Current
VCE = 400V
RG = 2.7
TJ = 25°C
TJ = 125°C
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40
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60
0
255075
100
125
150
ICE, Collector to Emitter Current (A)
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Current Fall Time vs Collector Current
VCE = 400V, VGE = 15V, RG = 2.7
TJ=125°C,
VGE=15V
0
0.5
1
1.5
2
0
25
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ICE, Collector to Emitter Current (A)
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Turn-On Energy Loss vs Collector Current
VCE = 400V
RG = 2.7
TJ = 125°C
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0.5
1
1.5
2
2.5
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100
125
150
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Turn-Off Energy Loss vs Collector Current
VCE = 400V
VGE = 15V
RG = 2.7
Eon, 50A
Eoff, 50A
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1
1.5
2
2.5
3
0
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Gate Resistance (Ohms)
Switching Energy Losses vs Gate Resistance
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VCE = 400V
VGE = 15V
TJ= 125°C
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20
40
60
80
100
120
0
200
400
600
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Reverse Bias Safe Operating Area
VCE, Collector to Emitter Voltage (V)
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參數(shù)描述 |
|---|---|
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| CGY1041,112 | 功能描述:射頻放大器 1CH 3.6dB 30V 265mA RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| CGY1041/01,112 | 制造商:NXP Semiconductors 功能描述:- Rail/Tube |
| CGY1043 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:1 GHz, 23 dB gain GaAs push-pull amplifier |
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