參數(shù)資料
型號： CGD985HCI
廠商： NXP Semiconductors N.V.
元件分類： 功率放大器
英文描述： Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V (DC), employing Hetero junction Field Effect Transistor (HFET) GaAs dies.
封裝： CGD985HCI<SOT115J|<<<1<Always Pb-free,;CGD985HCI/01<SOT115J|<<<1<Always Pb-free,;
文件頁數(shù)： 1/9頁
文件大?。?/td> 94K
代理商： CGD985HCI
1.
Product profile
1.1 General description
Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V
Direct Current (DC), employing Hetero junction Field Effect Transistor (HFET) GaAs dies.
1.2 Features and benefits
Excellent linearity
Optimized for flat PAL D and flat NTSC loading
Superior levels of ESD protection
Extremely low noise
Excellent return loss properties
Gain compensation over temperature
Rugged construction
Unconditionally stable
Thermally optimized design
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
Integrated ring wave surge protection
1.3 Applications
CATV systems operating in the 40 MHz to 862 MHz / 1003 MHz frequency range
using PAL D or NTSC channel conditions.
1.4 Quick reference data
[1]
98 PAL D channels with 8 MHz bandwidth per channel; [f = 47 MHz to 862 MHz]; flat Vo till 862 MHz.
[2]
Direct Current (DC).
CGD985HCI
1 GHz, 25 dB gain GaAs high output power doubler
Rev. 1 — 5 April 2011
Product data sheet
Table 1.
Quick reference data
Bandwidth 40 MHz to 1003 MHz; VB = 24 V (DC); ZS = ZL = 75 Ω; Tmb =35 °C; unless otherwise
specified.
Symbol Parameter
Conditions
Min
Typ
Max Unit
Gp
power gain
f = 50 MHz
-
23.2 -
dB
f = 1003 MHz
23.5 24.4 25.5 dB
CTB
composite triple beat
Vo = 48 dBmV at 862 MHz
66 62 dBc
CSO
composite second-order
distortion
Vo = 48 dBmV at 862 MHz
69 62 dBc
Itot
total current
440
460
mA
相關(guān)PDF資料
PDF描述
CGD985HCI 1 GHz, 25 dB gain GaAs high output power doubler
CGD987HCI Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V (DC), employing Hetero junction Field Effect Transistor (HFET) GaAs dies.
CGY1032 1 GHz, 32 dB gain GaAs push-pull amplifier
CGY1041 1 GHz, 21 dB gain GaAs push-pull amplifier
CGY1047 1 GHz, 27 dB gain GaAs push-pull amplifier
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CGD985HCI,112 功能描述:射頻放大器 1GHz 25dB gain GaAs Hi output pwr doublr RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel
CGD985HCI/01,112 制造商:NXP Semiconductors 功能描述:1 GHZ, 25 DB GAIN GAAS HIGH OUTPUT POWER DOUBLER - Rail/Tube
CGD985LCU 功能描述:IC AMP CATV PWR DOUBLER 8SIL 制造商:nxp semiconductors 系列:- 包裝:管件 零件狀態(tài):過期 應(yīng)用:CATV 輸出類型:- 電路數(shù):1 -3db 帶寬:- 壓擺率:- 電流 - 電源:365mA 電流 - 輸出/通道:- 電壓 - 電源，單/雙（±）:24V 安裝類型:表面貼裝 封裝/外殼:SOT-115AE 供應(yīng)商器件封裝:8-SIL 標(biāo)準(zhǔn)包裝:25
CGD987HCI,112 功能描述:射頻放大器 1GHz 27 dB gain GaAs hi output pwr dblr RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel
CGDCABLE4M 制造商:Carlo Gavazzi 功能描述:
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