參數(shù)資料
型號(hào): CGD1042H
廠商: NXP Semiconductors N.V.
元件分類: 功率放大器
英文描述: Hybrid amplifier module operating at a supply voltage of 24 V (DC), employing Hetero junction Field Effect Transistor (HFET) GaAs dies.
封裝: CGD1042H<SOT115J|<<<1<Always Pb-free,;
文件頁(yè)數(shù): 1/8頁(yè)
文件大?。?/td> 85K
代理商: CGD1042H
1.
Product profile
1.1 General description
Hybrid amplifier module in a SOT115J package, operating at a supply voltage of
24 V (DC), employing Hetero junction Field Effect Transistor (HFET) GaAs dies.
1.2 Features and benefits
High output power capability
Excellent linearity
Extremely low noise
Excellent return loss properties
Rugged construction
Unconditionally stable
Thermal optimized design
1.3 Applications
CATV systems operating in the 40 MHz to 1000 MHz frequency range
1.4 Quick reference data
[1]
Direct Current (DC).
CGD1042H
1 GHz, 23 dB gain high output power doubler
Rev. 3 — 28 September 2010
Product data sheet
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
Table 1.
Quick reference data
Bandwidth to 1000 MHz; VB =24V (DC); Tmb =35 C; unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Gp
power gain
f = 45 MHz
-
21.5
-
dB
f = 1000 MHz
22.0
23.0
24.0
dB
Itot
total current
[1] 430
450
470
mA
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