型號(hào): | CGD1042H |
廠商: | NXP Semiconductors N.V. |
元件分類: | 功率放大器 |
英文描述: | Hybrid amplifier module operating at a supply voltage of 24 V (DC), employing Hetero junction Field Effect Transistor (HFET) GaAs dies. |
封裝: | CGD1042H<SOT115J|<<<1<Always Pb-free,; |
文件頁(yè)數(shù): | 1/8頁(yè) |
文件大?。?/td> | 85K |
代理商: | CGD1042H |
相關(guān)PDF資料 |
PDF描述 |
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CGD1044H | Hybrid amplifier module operating at a supply voltage of 24 V (DC), employing Hetero junction Field-Effect Transistor (HFET) GaAs dies. |
CGD942C | Hybrid amplifier module operating at a supply voltage of 24 V (DC), employing Hetero Field-Effect Transistor (HFET) GaAs dies. |
CGD944C | Hybrid amplifier module operating at a supply voltage of 24 V (DC), employing Hetero Field Effect Transistor (HFET) GaAs dies. |
CGD982HCI | Hybrid amplifier module in a SOT115J package, operating at a supply voltage of 24 V (DC), employing Hetero junction Field Effect Transistor (HFET) GaAs dies. |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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CGD1042H,112 | 功能描述:射頻混合器 CATV MODULES RoHS:否 制造商:NXP Semiconductors 頻率范圍: 轉(zhuǎn)換損失——最大: 工作電源電壓:6 V 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:Through Hole 封裝 / 箱體:PDIP-8 封裝:Tube |
CGD1042H_09 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:1 GHz, 23 dB gain high output power doubler |
CGD1042H112 | 制造商:Rochester Electronics LLC 功能描述: 制造商:NXP 功能描述: 制造商:NXP Semiconductors 功能描述: |
CGD1042HI | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:1 GHz, 22 dB gain GaAs high output power doubler |
CGD1042HI,112 | 功能描述:射頻放大器 1GHz,22 dB gain GaAs H-output PWR doubler RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測(cè)試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |