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參數(shù)資料
| 型號(hào)： | CF5016SERIES |
| 英文描述： | Crystal Oscillator Module IC |
| 中文描述： | 晶體振蕩器模塊IC |
| 文件頁(yè)數(shù)： | 3/7頁(yè) |
| 文件大?。?/td> | 90K |
| 代理商： | CF5016SERIES |
CF5011 series
NIPPON PRECISION CIRCUITS INC.—3
SPECIFICATIONS
Absolute Maximum Ratings
V
SS
= 0V
Recommended Operating Conditions
V
SS
= 0V, f
≤
70MHz, C
L
= 15pF unless otherwise noted.
Electrical Characteristics
V
DD
= 1.6 to 2.0V, V
SS
= 0V, Ta =
20 to +80
°
C unless otherwise noted.
Parameter
Symbol
Condition
Rating
Unit
Supply voltage range
V
DD
V
IN
V
OUT
T
opr
T
stg
I
OUT
0.5 to +3.6
V
Input voltage range
0.5 to V
DD
+ 0.5
V
Output voltage range
0.5 to V
DD
+ 0.5
V
Operating temperature range
40 to +85
°
°
C
Storage temperature range
65 to +150
C
Output current
25
mA
Parameter
Symbol
Condition
Rating
Unit
min
typ
max
Supply voltage
V
DD
V
IN
T
OPR
1.6
–
2.0
V
Input voltage
V
SS
20
–
V
DD
+80
V
Operating temperature
–
°
C
Parameter
Symbol
Condition
Rating
Unit
min
typ
max
HIGH-level output voltage
V
OH
V
OL
Q: Measurement cct 1, V
DD
= 1.6V I
OH
= 8mA
1.1
1.3
–
V
LOW-level output voltage
Q: Measurement cct 2, V
DD
= 1.6V I
OL
= 8mA
–
0.3
0.4
V
Output leakage current
I
Z
Q: Measurement cct 2, INHN = LOW
V
DD
= 2.0V
V
OH
V
OL
= V
DD
–
–
10
μA
= V
SS
–
–
10
μA
HIGH-level input voltage
V
IH
INHN
0.7V
DD
–
–
V
LOW-level input voltage
V
IL
INHN
–
–
0.3V
DD
V
Current consumption
I
DD
Measurement cct 3, load cct 1, INHN = open, C
f = 70MHz
L
= 15pF
–
9
18
mA
Standby current
I
ST
Measurement cct 3, INHN = LOW
CF5011AL
×
×
×
×
–
–
100
μA
INHN pull-up resistance
R
UP1
Measurement cct 4, INHN = LOW
CF5011AL
0.4
–
8
M
R
UP2
Measurement cct 4, INHN = 0.7V
DD
CF5011AL
CF5011AN
50
–
150
k
AC feedback resistance
R
f1
Design value, determined by the
internal wafer pattern
CF5011ALA, ANA
3.20
4.0
4.80
k
CF5011ALB, ANB
3.12
3.9
4.68
k
CF5011ALC, ANC
1.76
2.2
2.64
k
CF5011ALD, AND
2.16
2.7
3.24
k
DC feedback resistance
R
f2
Measurement cct 5
50
–
150
k
AC feedback capacitance
C
f
Design value, determined by the internal wafer pattern
9.3
10
10.7
pF
Built-in capacitance
C
G
Design value, determined by the
internal wafer pattern
CF5011ALA, ANA
13.02
14
14.98
pF
CF5011ALB, ALC, ALD
CF5011ANB, ANC, AND
7.44
8
8.56
pF
C
D
Design value, determined by the
internal wafer pattern
CF5011ALA, ANA
14.88
16
17.12
pF
CF5011ALB, ALC, ALD
CF5011ANB, ANC, AND
14.88
16
17.12
pF
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