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參數資料
| 型號： | CEPF630B |
| 英文描述： | 200V N Channel MOS |
| 中文描述： | 200伏?頻道馬鞍山 |
| 文件頁數： | 4/5頁 |
| 文件大?。?/td> | 42K |
| 代理商： | CEPF630B |
4-40
with Temperature
Figure 6. Breakdown Voltage Variation
with Temperature
V
G
g
F
,
B
D
,
D
I
with Drain Current
I
DS
, Drain-Source Current (A)
Figure 7. Transconductance Variation
Figure 8. Body Diode Forward Voltage
Variation with Source Current
V
SD
, Body Diode Forward Voltage (V)
Tj, Junction Temperature ( C)
Tj, Junction Temperature ( C)
Figure 5. Gate Threshold Variation
Figure 3. Capacitance
V
DS
, Drain-to Source Voltage (V)
C
1.30
1.20
1.10
1.00
0.90
0.80
0.70
0.60
-50
-25
0
25
50
75
100 125 150
V
DS
=V
GS
I
D
=250
A
-50
-25
0
25
50
75 100 125 150
1.15
1.10
1.05
1.00
0.95
0.90
0.85
I
D
=250
A
Figure 4. On-Resistance Variation with
Temperature
T
J
, Junction Temperature( C)
O
R
D
,
R
D
,
-100
-50
0
50
100
200
2.2
1.9
1.6
1.3
1.0
0.7
0.4
V
GS
=10V
I
D
=4.5A
150
Ciss
Coss
Crss
1200
1000
800
600
400
200
0
0
5
10
15
20
25
20
10
0.1
1
0.6
0.8
1.0
1.4
1.2
V
GS
=0V
9
12
0
3
6
0
2
4
6
8
V
DS
=40V
4
CEPF630B/CEBF630B
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