參數(shù)資料
型號(hào): CEP09N6
英文描述: 600V N Channel MOS
中文描述: 600V的?頻道馬鞍山
文件頁(yè)數(shù): 1/5頁(yè)
文件大?。?/td> 42K
代理商: CEP09N6
600
N-Channel Logic Level Enhancement Mode Field Effect Transistor
FEATURES
600V , 9A ,R
DS(ON)
= 1.2
@V
GS
=10V.
Super high dense cell design for extremely low R
DS(ON)
.
High power and current handling capability.
TO-220 & TO-263 package.
ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
V
Gate-Source Voltage
V
GS
30
V
-Pulsed
I
D
35
A
I
DM
9
A
Drain-Source Diode Forward Current
I
S
9
A
Maximum Power Dissipation
P
D
W
W/ C
Operating and Storage Temperature Range
T
J
, T
STG
-55 to 150
C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
R
JC
R
JA
0.8
62
/W
C
/W
C
@Tc=25 C
Derate above 25 C
156
1.25
Drain Current-Continuous
S
G
D
CEB SERIES
TO-263(DD-PAK)
CEP SERIES
TO-220
G
S
S
D
D
G
4-42
4
4
Jul. 2002
CEP09N6/CEB09N6
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