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參數(shù)資料
| 型號(hào)： | CEK01N6 |
| 英文描述： | 600V N Channel MOS |
| 中文描述： | 600V的?頻道馬鞍山 |
| 文件頁(yè)數(shù)： | 3/5頁(yè) |
| 文件大?。?/td> | 51K |
| 代理商： | CEK01N6 |
Parameter
Symbol
Condition
Min
Typ Max Unit
ELECTRICAL CHARACTERISTICS (T
C
=25 C unless otherwise noted)
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage
V
SD
V
GS
= 0V, Is =0.25A
1.5
V
a
Notes
a.Pulse Test:PulseWidth 300
s, Duty Cycle 2%.
b.Guaranteed by design, not subject to production testing.
3
Figure 1. Output Characteristics
V
DS
, Drain-to-Source Voltage (V)
I
D
,
I
D
,
b
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ISS
C
RSS
C
OSS
Output Capacitance
Reverse Transfer Capacitance
V
DS
=25V, V
GS
= 0V
f =1.0MH
Z
200
P
F
30
P
F
P
F
10
1.2
1.0
0.8
0.6
0.4
0.2
0
0
1
2
3
4
5
6
V
GS
=10,9,8,7V
V
GS
=5V
V
GS
=6V
Figure 2. Transfer Characteristics
V
GS
, Gate-to-Source Voltage (V)
0.01
0.1
2
4
6
10
8
25 C
150 C
-55 C
1.V
DS
=40V
2.Pulse Test
CEK01N6
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