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參數(shù)資料
| 型號： | CEG3456A |
| 英文描述： | 30V N Channel MOS |
| 中文描述： | 30V的?頻道馬鞍山 |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 54K |
| 代理商： | CEG3456A |
Parameter
Symbol
Condition
Min Typ Max Unit
ELECTRICAL CHARACTERISTICS (T
A
=25 C unless otherwise noted)
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage
V
SD
V
GS
= 0V, Is =1.7A
1.3
V
b
Notes
a.Surface Mounted on FR4 Board, t 10sec.
c.Guaranteed by design, not subject to production testing.
b.Pulse Test:PulseWidth 300
s, Duty Cycle 2%.
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
Figure 3. Capacitance
V
DS
, Drain-to Source Voltage (V)
V
GS
, Gate-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
I
D
,
C
I
D
,
3
Figure 4. On-Resistance Variation with
Temperature
T
J
, Junction Temperature( C)
O
R
D
,
R
D
,
0
1
2
3
4
5
-55 C
6
9
12
15
18
3
Tj=125 C
25 C
CEG3456A
9
-100
-50
0
50
100
200
1.8
1.6
1.4
1.2
1.0
0.8
0.6
V
GS
=10V
I
D
=4.8A
150
30
25
20
15
10
5
0
0
1.0
2.0
3.0
4.0
V
GS
=4V
V
GS
=10,8,6,5V
V
GS
=3V
0
5
10
15
20
25
30
Ciss
Coss
Crss
600
500
400
300
200
100
0
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