參數(shù)資料
型號: CED6031L
英文描述: 30V N Channel MOS
中文描述: 30V的?頻道馬鞍山
文件頁數(shù): 4/5頁
文件大?。?/td> 38K
代理商: CED6031L
CED6030L/CEU6030L
with Temperature
Figure 6. Breakdown Voltage Variation
with Temperature
V
G
g
F
,
V
G
,
B
D
,
D
I
Figure 7. Transconductance Variation
with Drain Current
I
DS
, Drain-Source Current (A)
Figure 9. Gate Charge
Qg, Total Gate Charge (nC)
Figure 10. Maximum Safe
Operating Area
V
DS
, Drain-Source Voltage (V)
Figure 8. Body Diode Forward Voltage
Variation with Source Current
V
SD
, Body Diode Forward Voltage (V)
Tj, Junction Temperature ( C)
Tj, Junction Temperature ( C)
I
D
,
6-30
6
50
10
1.0
0.1
0.4
0.6
0.8
1.0
1.2
1.4
1.15
1.10
1.05
1.0
0.95
0.90
0.85
0.80
-50
-25
0
25
50
75
100 125 150
V
DS
=V
GS
I
D
=250
A
Figure 5. Gate Threshold Variation
50
40
30
20
10
0
0
10
20
30
40
V
DS
=10V
300
200
100
10
0.5
1
1
10
30
60
V
=10V
Single Pulse
Tc=25 C
R
DS
(ON Lmt
DC
10ms
1ms
100
s
10
0
2
4
6
8
0
5
10
15
25
20
30
35
40
V
DS
=24V
I
D
=40A
-50
-25
0
25
50
75 100 125 150
1.20
1.15
1.10
1.05
1.00
0.95
0.90
I
D
=250
A
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