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參數(shù)資料
| 型號： | CDA1585BC |
| 英文描述： | BJT |
| 中文描述： | 雙極型晶體管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 58K |
| 代理商： | CDA1585BC |
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
PNP EPITAXIAL PLANAR SILICON TRANSISTOR
CDA1585BC
(9AW)
TO-92
BCE
Marking : CDA
1585
BC
ABSOLUTE MAXIMUM RATINGS(Ta=25deg C unless otherwise specified)
DESCRIPTION
Collector -Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Collector Current Peak
Collector Power Dissipation
Operating And Storage Junction
Temperature Range
*Single Pulse Pw=10ms
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Cut off Current
SYMBOL
BVCBO
BVCEO
BVEBO
IC
ICP*
PC
Tj, Tstg
VALUE
20
20
6.0
2.0
5.0
0.4
-55 to +150
UNIT
V
V
V
A
A
W
deg C
SYMBOL
VCBO
VCEO
VEBO
ICBO
ICEO
IEBO
hFE
TEST CONDITION
IC=50uA, IE=0
IC=1mA, IB=0
IE=50uA, IC=0
VCB=20V, IE=0
VCE=20V, IB=0
VEB=5V, IC=0
VCE=2V, IC=0.1A
VCE=2V, IC=2A
IC=2A, IB=0.1A
VCE=2V,IC=0.5A,
f=100MHz
VCB=10V, IE=0
f=1MHz
MIN
20
20
6.0
-
TYP
MAX
-
-
-
0.1
1.0
0.1
500
-
1.0
UNIT
V
V
V
uA
uA
uA
-
Emitter Cut off Current
DC Current Gain
-
-
-
-
-
220
120
-
Collector Emitter Saturation Voltage
Dynamic Characteristics
Transition Frequency
VCE(Sat)
V
ft
-
150
-
MHz
Collector Output Capacitance
Cob
-
35
-
pF
IS/ISO 9002
Lic# QSC/L- 000019.2
IS / IECQC 700000
IS / IECQC 750100
Continental Device India Limited
Data Sheet
Page 1 of 3
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