參數(shù)資料
型號(hào): C3025
廠商: IMP INC.
英文描述: Process C3025 CMOS 3Um 10 Volt Analog
中文描述: 工藝C3025的CMOS 3Um 10伏模擬
文件頁數(shù): 2/2頁
文件大?。?/td> 26K
代理商: C3025
94
C3025-4-98
Process C3025
Starting Material
Starting Mat. Resistivity
Typ. Operating Voltage
Well Type
Metal Layers
Poly Layers
Contact Size
Metal-1 Width/Space
Gate Poly Width/Space
Special Feature of C3025 Process: 10 Volt P-well single metal analog process.
P <100>
15 - 25
-cm
10V
P-well
1
2
2.0x2.0
μ
m
3.5 / 2.5
μ
m
3.0 / 3
μ
m
N+/P+ Width/Space
N+ To P+ Space
Contact To Poly Space
Contact Overlap Of Active
Contact Overlap Of Poly
Metal-1 Overlap Of Contact
Minimum Pad Opening
Minimum Pad-to-Pad Spacing
Minimum Pad Pitch
3.0 / 3.0
μ
m
12
μ
m
2.5
μ
m
1.5
μ
m
1.0
μ
m
1.0
μ
m
100x100
μ
m
5.0
μ
m
80.0
μ
m
Physical Characteristics
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