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參數(shù)資料
| 型號： | C15ABC |
| 英文描述： | LOW DROP POWER SCHOTTKY RECTIFIER |
| 中文描述： | 混合信號CMOS工藝和專門模擬 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大小： | 47K |
| 代理商： | C15ABC |
1.5
μ
m - 5 volts
min. typ. max.
NPN vertical
180
1.5
μ
m
min. typ. max.
Pwell
5700
Pfield in Pwell
2600
3000
3400
N+
30
40
50
P+
70
90
110
Poly gate
15
20
25
Poly capacitor
75
100
125
Metal I
0.038
Metal II
0.038
1.5
μ
m
min. typ. max.
Inter-poly
0.62
0.72
0.84
Gate oxide
1.3
N+ Junction
0.29
P+ Junction
0.27
1
Test condition : Vce = 5 volts
Note: These values are for guidance only. Many of them can be adjusted to suit customer requirements.
For full process specifications contact a Mitel sales office or representative.
I
Vds (volts)
0
1
2
3
4
5
0
-1
-2
Vds (volts)
-3
-4
-5
I
Vgs (volts)
I
Vgs (volts)
I
I
μ
A
I
μ
A
Vgs = 2 volts
Vgs = 3 volts
Vgs = 4 volts
Vgs = 5 volts
Vgs = -2 volts
Vgs = -3 volts
Vgs = -4 volts
Vgs = -5 volts
10
-13
10
-12
10
-11
10
-10
10
-09
10
-08
10
-07
10
-06
10
-05
10
-04
10
-13
10
-12
10
-11
10
-10
10
-09
10
-08
10
-07
10
-06
10
-05
10
-04
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
0
0.5
1.0
1.5
2.0
0
-0.5
-1.0
-1.5
-2.0
80
70
60
50
40
30
20
10
0
-22
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
-1.1
-1.0
-0.9
-0.8
-0.7
-0.6
-0.5
-0.4
-0.3
-0.2
-0.1
0
Bipolar gain
1
FIG 1 : I-V Characteristics for a 10x1.5
μ
m N-MOSFET
(1.5
μ
m 5 volts process)
FIG 2 : I-V Characteristics for a 10x1.5
μ
m P-MOSFET
(1.5
μ
m 5 volts process)
FIG 3 : Subthreshold Characteristics at Vds=0.1 volt
for a 10x1.5μm N-MOSFET (1.5
μ
m 5 volts process)
FIG 4 : Subthreshold Characteristics at Vds=-0.1 volt
for a 10x1.5
μ
m P-MOSFET (1.5
μ
m 5 volts process)
Capacitances (fF/
μ
m
2
)
Resistances (
/sq.)
1.5 Micron CMOS Process Family (cont’d)
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