參數(shù)資料
型號(hào): BZV87-2V6
廠商: NXP SEMICONDUCTORS
元件分類(lèi): 參考電壓二極管
英文描述: Low-voltage stabistors
中文描述: SILICON, STABISTOR DIODE
文件頁(yè)數(shù): 3/5頁(yè)
文件大?。?/td> 27K
代理商: BZV87-2V6
1996 Mar 21
3
Philips Semiconductors
Product specification
Low-voltage stabistors
BZV87 series
ELECTRICAL CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1.
Device mounted on a FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
F
forward voltage
BZV87-1V4
BZV87-2V0
BZV87-2V6
BZV87-3V2
reverse current
differential resistance
BZV87-1V4
BZV87-2V0
BZV87-2V6
BZV87-3V2
differential resistance
BZV87-1V4
BZV87-2V0
BZV87-2V6
BZV87-3V2
differential resistance
BZV87-1V4
BZV87-2V0
BZV87-2V6
BZV87-3V2
temperature coefficient
BZV87-1V4
BZV87-2V0
BZV87-2V6
BZV87-3V2
diode capacitance
I
F
= 5 mA; see Fig.2
1.30
1.85
2.35
2.85
1.50
2.15
2.80
3.45
V
V
V
V
nA
I
R
r
dif
V
R
= 5 V
I
F
= 1 mA; f = 1 kHz
200
55
80
90
100
r
dif
I
F
= 5 mA; f = 1 kHz
10
15
18
20
20
30
32.5
35
r
dif
I
F
= 10 mA; f = 1 kHz
6
8
9
10
15
17.5
20
10
S
F
I
F
= 5 mA
3.8
6.0
8.5
11.5
15
mV/K
mV/K
mV/K
mV/K
pF
C
d
V
R
= 0 V; f = 1 MHz
25
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-tp
R
th j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
300
380
K/W
K/W
note 1
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