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參數(shù)資料
| 型號： | BZV86-3V2 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Low-voltage stabistors |
| 中文描述： | SILICON, STABISTOR DIODE, DO-35 |
| 封裝： | HERMETIC SEALED, GLASS PACKAGE-2 |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 22K |
| 代理商： | BZV86-3V2 |
1996 Mar 21
3
Philips Semiconductors
Product specification
Low-voltage stabistors
BZV86 series
ELECTRICAL CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
F
forward voltage
BZV86-1V4
BZV86-2V0
BZV86-2V6
BZV86-3V2
reverse current
differential resistance
BZV86-1V4
BZV86-2V0
BZV86-2V6
BZV86-3V2
differential resistance
BZV86-1V4
BZV86-2V0
BZV86-2V6
BZV86-3V2
differential resistance
BZV86-1V4
BZV86-2V0
BZV86-2V6
BZV86-3V2
temperature coefficient
BZV86-1V4
BZV86-2V0
BZV86-2V6
BZV86-3V2
diode capacitance
I
F
= 5 mA; see Fig.2
1.30
1.85
2.35
2.85
1.50
2.15
2.80
3.45
V
V
V
V
nA
I
R
r
dif
V
R
= 5 V
I
F
= 1 mA; f = 1 kHz
200
55
80
90
100
r
dif
I
F
= 5 mA; f = 1 kHz
10
15
18
20
20
30
32.5
35
r
dif
I
F
= 10 mA; f = 1 kHz
6
8
9
10
15
17.5
20
10
S
F
I
F
= 5 mA
3.8
6.0
8.5
11.5
15
mV/K
mV/K
mV/K
mV/K
pF
C
d
V
R
= 0 V; f = 1 MHz
25
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-tp
R
th j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
8 mm from the body
lead length 10 mm
300
380
K/W
K/W
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BZV87-1V4 | Low-voltage stabistors |
| BZV87-2V0 | Low-voltage stabistors |
| BZV87-2V6 | Low-voltage stabistors |
| BZV87-3V2 | Low-voltage stabistors |
| BZV90SERIES | Voltage regulator diodes |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BZV86SERIES | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Low-voltage stabistors |
| BZV87 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Low-voltage stabistors |
| BZV87-1V4 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Low-voltage stabistors |
| BZV87-2V0 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Low-voltage stabistors |
| BZV87-2V6 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Low-voltage stabistors |
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