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參數(shù)資料
| 型號(hào)： | BZV85 |
| 英文描述： | ECONOLINE: RQS & RQD - 1kVDC Isolation- Internal SMD Construction- UL94V-0 Package Material- Toroidal Magnetics- Efficiency to 80% |
| 中文描述： | ECONOLINE: RQS & RQD - 隔離的直流1千伏，國(guó)際標(biāo)準(zhǔn)的SMD封裝：UL94V，0型封裝材料，環(huán)形磁場(chǎng)，效率達(dá)到81% |
| 文件頁(yè)數(shù)： | 6/8頁(yè) |
| 文件大?。?/td> | 53K |
| 代理商： | BZV85 |
1999 May 11
6
Philips Semiconductors
Product specification
Voltage regulator diodes
BZV85 series
Fig.3
Non-repetitive peak reverse current as a
function of the nominal working voltage.
handbook, halfpage
MBG802
2
10
VZnom (V)
IZSM
(A)
10
1
10
2
10
1
1
(1)
(2)
(1) t
p
= 10
μ
s; half sinewave; T
amb
= 25
°
C.
(2) t
p
= 10 ms; half sinewave; T
amb
= 25
°
C.
Fig.4
Forward current as a function of forward
voltage; typical values.
handbook, halfpage
0
1.0
0
100
200
MBG925
0.5
VF (V)
IF
(mA)
(1)
(2)
(1) T
j
= 200
°
C.
(2) T
j
= 25
°
C.
Fig.5
Temperature coefficient as a function of
working current; typical values.
BZV85-C3V6 to C10.
T
j
= 25 to 150
°
C.
For types above 7.5 V the temperature coefficient is independent
of current; see Table “Per type”.
handbook, halfpage
0
50
0
5
5
MBG926
25
IZ (mA)
SZ
(mV/K)
4V7
4V3
3V6
3V9
10
9V1
8V2
7V5
6V8
6V2
5V6
5V1
Fig.6
Temperature coefficient as a function of
nominal working voltage.
handbook, halfpage
(mV/K)
0
10
2
MBG800
10
VZnom (V)
1
20
40
60
80
(2)
(1)
(3)
I
Z =
I
Ztest
; T
j
= 25 to 150
°
C.
(1) Maximum values.
(2) Typical values.
(3) Minimum values.
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