參數(shù)資料
型號(hào): BZV8556
英文描述: 80mW, Fixed-Gain, DirectDrive, Stereo Headphone Amplifier with Shutdown
中文描述: 硅平面電源穩(wěn)壓二極管
文件頁(yè)數(shù): 5/8頁(yè)
文件大?。?/td> 53K
代理商: BZV8556
1999 May 11
5
Philips Semiconductors
Product specification
Voltage regulator diodes
BZV85 series
THERMAL CHARACTERISTICS
Note
1.
Device mounted on a printed circuit-board with 1 cm
2
copper area per lead.
GRAPHICAL DATA
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-tp
R
th j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
lead length 4 mm; see Fig.2
lead length10 mm; note 1
110
175
K/W
K/W
Fig.2 Thermal resistance from junction to tie-point with a lead length of 4 mm.
handbook, full pagewidth
10
2
10
1
1
10
10
2
10
3
10
4
MBG929
1
10
10
2
3
tp (ms)
tp
tp
T
T
δ
=
δ
= 1
0.02
0.01
0
0.75
0.50
0.33
0.20
0.10
0.05
Rth j-tp
(K/W)
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