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參數(shù)資料
| 型號： | BZV10 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Voltage Reference Diodes(電壓基準(zhǔn)二極管) |
| 中文描述： | 6.2 V, SILICON, VOLTAGE REFERENCE DIODE, DO-34 |
| 封裝： | HERMETIC SEALED, GLASS, DO-34, 2 PIN |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 26K |
| 代理商： | BZV10 |
1996 Mar 21
3
Philips Semiconductors
Product specification
Voltage reference diodes
BZV10 to BZV14
ELECTRICAL CHARACTERISTICS
T
amb
= 25
°
C unless otherwise specified.
Notes
1.
The quoted values of
V
ref
are based on a constant current I
Z
. Two factors can cause
V
ref
to change, namely the
differential resistance r
dif
and the temperature coefficient S
Z
.
a) As the max. r
dif
of the device can be 50
, a change of 0.01 mA in the current through the reference diode will
result in a
V
ref
of 0.01 mA
×
50
= 0.5 mV. This level of
V
ref
is not significant on a BZV10 (
V
ref
< 46 mV),
it is however very significant on a BZV14 (
V
ref
< 2.3 mV).
b) The temperature coefficient of the reference voltage S
Z
is a function of I
Z
. Reference diodes are classified at the
specified test current, and the S
Z
of the reference diode will be different at different levels of I
Z
. The absolute value
of I
Z
is important, however, the stability of I
Z
, once the level has been set, is far more significant. This applies
particularly to the BZV13 and BZV14. The effect of the stability of I
Z
on S
Z
is shown in Fig.2.
All reference diodes are characterized by the ‘box method’. This guarantees a maximum voltage excursion (
V
ref
)
over the specified temperature range, at the specified test current (I
Z
), verified by tests at indicated temperature
points within the range. V
Z
is measured and recorded at each temperature specified. The
V
ref
between the highest
and lowest values must not exceed the maximum
V
ref
given. Therefore the temperature coefficient is only given as
V
V
–
T
amb2
T
amb1
–
2.
a reference. It may be derived from:
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
ref
V
ref
reference voltage
reference voltage excursion
BZV10
BZV11
BZV12
BZV13
BZV14
temperature coefficient
BZV10
BZV11
BZV12
BZV13
BZV14
differential resistance
I
Z
=2 mA
I
Z
=2 mA; test points for
T
amb
: 0; +25; +70
°
C;
notes 1 and 2
5.9
6.2
6.5
V
46
23
9
mV
mV
mV
mV
mV
4.6
2.3
S
Z
I
Z
= 2 mA: see Fig.2;
notes 1 and 2
0.01
0.005
0.002
0.001
0.0005 %/K
50
%/K
%/K
%/K
%/K
r
dif
I
Z
= 2 mA; see Fig.3
20
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-tp
R
th j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
8 mm from the body
lead length 10 mm
300
375
K/W
K/W
S
Z
-------------------------------------
V
ref nom
----100
×
=
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