參數(shù)資料
型號(hào): BZT03-C12
廠商: NXP SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: Circular Connector; Body Material:Aluminum; Series:PT00; No. of Contacts:55; Connector Shell Size:22; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Circular Contact Gender:Pin; Insert Arrangement:22-55
中文描述: 300 W, UNIDIRECTIONAL, SILICON, TVS DIODE
封裝: HERMETIC SEALED, GLASS PACKAGE-2
文件頁(yè)數(shù): 6/9頁(yè)
文件大?。?/td> 46K
代理商: BZT03-C12
1996 Jun 11
6
Philips Semiconductors
Product specification
Voltage regulator diodes
BZT03 series
Note
1.
Non-repetitive peak reverse current in accordance with “IEC 60-1, Section 8”(10/1000
μ
s pulse); see Fig.4.
THERMAL CHARACTERISTICS
Note
1.
Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer
40
μ
m, see Fig.6.
For more information please refer to the “General Part of associated Handbook”
BZT03-C180
BZT03-C200
BZT03-C220
BZT03-C240
BZT03-C270
BZT03-C300
BZT03-C330
BZT03-C360
BZT03-C390
BZT03-C430
BZT03-C470
BZT03-C510
168
188
208
228
251
280
310
340
370
400
440
480
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.09
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
0.13
5
5
2
2
2
2
2
2
2
2
2
2
249
276
305
336
380
419
459
498
537
603
655
707
1.2
1.1
1.0
0.9
0.8
0.72
0.65
0.60
0.56
0.50
0.45
0.42
5
5
5
5
5
5
5
5
5
5
5
5
150
160
180
200
220
240
270
300
330
360
390
430
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-tp
R
th j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
lead length = 10 mm
note 1
46
K/W
K/W
100
TYPE
NUMBER
REVERSE
BREAKDOWN
VOLTAGE
TEMPERATURE
COEFFICIENT
TEST
CURRENT
CLAMPING
VOLTAGE
REVERSE
CURRENT at
STAND-OFF
VOLTAGE
V
(BR)R
(V)
at I
test
S
Z
(%/K) at I
test
I
test
(mA)
V
(CL)R
(V)
at I
RSM
(A)
note 1
I
R
(
μ
A)
at V
R
(V)
MIN.
MIN.
MAX.
MAX.
MAX.
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