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參數(shù)資料
| 型號： | BZM55B56-TR |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 56 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT, HERMETIC SEALED, GLASS, MICROMELF-2 |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 162K |
| 代理商： | BZM55B56-TR |
BZM55-Series
Vishay Semiconductors
Document Number 85597
Rev. 2.0, 26-Aug-10
www.vishay.com
1
9612315
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
Small Signal Zener Diodes
Features
Saving space
Hermetic sealed parts
Electrical data identical with the devices
BZT55..Series/TZM..Series
Fits onto SOD-323/SOD-110 footprints
Very sharp reverse characteristic
Low reverse current level
Very high stability
Low noise
Available with tighter tolerances
AEC-Q101 qualified
Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21
definition
Applications
Voltage stabilization
Mechanical Data
Case:
MicroMELF
Weight:
approx. 12 mg
Packaging codes/options:
TR/2.5 k per 7" reel, 12.5 k/box
TR3/10 k per 13" reel, 10 k/box
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Power dissipation
Thermal Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Forward voltage
Test condition
R
thJA
≤
300 K/W
Symbol
P
V
I
Z
T
j
T
stg
Value
500
P
V
/V
Z
175
Unit
mW
Z-current
mA
Junction temperature
°C
Storage temperature range
- 65 to + 175
°C
Test condition
Symbol
Value
Unit
Junction to ambient air
Mounted on epoxy-glass hard
tissue, fig. 1
35 μm copper clad, 0.9 mm
2
copper area per electrode
R
thJA
500
K/W
Junction tie point
R
thJL
300
K/W
Test condition
I
F
= 200 mA
Symbol
V
F
Min.
Typ.
Max.
1.5
Unit
V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BZM55B56-TR3 | 功能描述:穩(wěn)壓二極管 56 Volt 0.5W 2% RoHS:否 制造商:Vishay Semiconductors 齊納電壓:12 V 電壓容差:5 % 電壓溫度系數(shù):0.075 % / K 齊納電流: 功率耗散:3 W 最大反向漏泄電流:3 uA 最大齊納阻抗:7 Ohms 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AC 封裝:Reel |
| BZM55B5V1 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Silicon Epitaxial Planar Z-Diodes |
| BZM55-B5V1 | 制造商:GOOD-ARK 制造商全稱:GOOD-ARK Electronics 功能描述:Zener Diodes |
| BZM55B5V1 _R1 _10001 | 制造商:PanJit Touch Screens 功能描述: |
| BZM55B5V1_ R2 _10001 | 制造商:PanJit Touch Screens 功能描述: |
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