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參數(shù)資料
| 型號： | BYV32F |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Rectifier diodes ultrafast, rugged |
| 中文描述： | 12 A, 200 V, SILICON, RECTIFIER DIODE |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 54K |
| 代理商： | BYV32F |
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYV32F, BYV32EX series
FEATURES
SYMBOL
QUICK REFERENCE DATA
Low forward volt drop
Fast switching
Soft recovery characteristic
Reverse surge capability
High thermal cycling performance
Isolated mounting tab
V
R
= 150 V/ 200 V
V
F
≤
0.85 V
I
O(AV)
= 12 A
I
RRM
= 0.2 A
t
rr
≤
25 ns
GENERAL DESCRIPTION
Dual, ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power
supplies.
The BYV32F series is supplied in the SOT186 package.
The BYV32EX series is supplied in the SOT186A package.
PINNING
SOT186
SOT186A
PIN
DESCRIPTION
1
anode 1 (a)
2
cathode (k)
3
anode 2 (a)
tab
isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
BYV32F / BYV32EX
-150
150
150
150
-200
200
200
200
V
RRM
V
RWM
V
R
I
O(AV)
Peak repetitive reverse voltage
Crest working reverse voltage
Continuous reverse voltage
Average rectified output current square wave
(both diodes conducting)
1
Repetitive peak forward current t = 25
μ
s;
δ
= 0.5;
per diode
Non-repetitive peak forward
current per diode
-
-
-
-
V
V
V
A
12
δ
= 0.5; T
hs
≤
95 C
I
FRM
-
20
A
T
≤
95 C
t = 10 ms
t = 8.3 ms
sinusoidal; with reapplied
V
I
FSM
-
-
125
137
A
A
I
RRM
Repetitive peak reverse current t
p
= 2
μ
s;
δ
= 0.001
per diode
Non-repetitive peak reverse
current per diode
Storage temperature
Operating junction temperature
-
0.2
A
I
RSM
t
p
= 100
μ
s
-
0.2
A
T
stg
T
j
-40
-
150
150
C
C
k
a1
1
a2
3
2
1 2 3
case
1 2 3
case
1
Neglecting switching and reverse current losses
October 1998
1
Rev 1.300
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| BYV32EXSERIES | 5.0 AMP POSITIVE VOLTAGE REGULATOR |
| BYV32FSERIES | 5.0 AMP POSITIVE VOLTAGE REGULATOR |
| BYV32EX-150 | Rectifier diodes ultrafast, rugged |
| BYV34-300M | Hermetically Sealed Dual Fast Recovery Silicon Rectifier For HI-REL Application(氣密封裝的快速恢復(fù)雙硅整流器(HI-REL應(yīng)用)) |
| BYV34-400M | Hermetically Sealed Dual Fast Recovery Silicon Rectifier For HI-REL Application(氣密封裝的快速恢復(fù)雙硅整流器(HI-REL應(yīng)用)) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BYV32F-150 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Rectifier diodes ultrafast, rugged |
| BYV32F-200 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Rectifier diodes ultrafast, rugged |
| BYV32FSERIES | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Rectifier diodes ultrafast. rugged |
| BYV32G-200 | 制造商:NXP Semiconductors 功能描述:DIODE ULTRAFAST 2X10A 200V I2PAK 制造商:NXP Semiconductors 功能描述:DIODE, ULTRAFAST, 2X10A, 200V, I2PAK 制造商:NXP Semiconductors 功能描述:DIODE, ULTRAFAST, 2X10A, 200V, I2PAK; Diode Type:Ultrafast Recovery; Diode Configuration:Dual Common Cathode; Repetitive Reverse Voltage Vrrm Max:200V; Forward Current If(AV):20A; Forward Voltage VF Max:850mV; Diode Case Style:TO-262;RoHS Compliant: Yes |
| BYV32G-200,127 | 功能描述:二極管 - 通用，功率，開關(guān) DUAL ULTRAFAST PWR DIODE RoHS:否 制造商:STMicroelectronics 產(chǎn)品:Switching Diodes 峰值反向電壓:600 V 正向連續(xù)電流:200 A 最大浪涌電流:800 A 配置: 恢復(fù)時間:2000 ns 正向電壓下降:1.25 V 最大反向漏泄電流:300 uA 最大功率耗散: 工作溫度范圍: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:ISOTOP 封裝:Tube |
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