參數(shù)資料
型號: BYV26D
廠商: NXP SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: ECONOLINE: RQS & RQD - 1kVDC Isolation- Internal SMD Construction- UL94V-0 Package Material- Toroidal Magnetics- Efficiency to 80%
中文描述: 0.65 A, 800 V, SILICON, SIGNAL DIODE
封裝: HERMETIC SEALED, GLASS, SOD-57, 2 PIN
文件頁數(shù): 8/12頁
文件大?。?/td> 74K
代理商: BYV26D
1996 May 30
8
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYV26 series
0
1
2
0
1
P
(W)
MSA854
0.5
IF(AV)(A)
2
1.57
1.42
3
a = 3 2.5
BYV26A to E
a = I
F(RMS)
/I
F(AV)
; V
R
= V
RRMmax
;
δ
= 0.5.
Fig.10 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function of
average forward current.
BYV26F and G
a = I
F(RMS)
/I
F(AV)
; V
R
= V
RRMmax
;
δ
= 0.5.
Fig.11 Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function of
average forward current.
0
1
2
0
1
P
(W)
MLB532
0.5
IF(AV)(A)
3
1.42
a = 3
2.5
2
1.57
BYV26A to E
Solid line = V
R
.
Dotted line = V
RRM
;
δ
= 0.5.
Fig.12 Maximum permissible junction temperature
as a function of reverse voltage.
handbook, halfpage
0
400
1200
0
MSA857
800
100
VR
Tj
( C)
A
B
C
D
E
BYV26F and G
Solid line = V
R
.
Dotted line = V
RRM
;
δ
= 0.5.
Fig.13 Maximum permissible junction temperature
as a function of reverse voltage.
handbook, halfpage
0
2000
0
MLB599
1000
100
VR
Tj
( C)
F
G
相關(guān)PDF資料
PDF描述
BYV26E ECONOLINE: RQS & RQD - 1kVDC Isolation- Internal SMD Construction- UL94V-0 Package Material- Toroidal Magnetics- Efficiency to 80%
BYV26F Fast soft-recovery controlled avalanche rectifiers
BYV26G ECONOLINE: RQS & RQD - 1kVDC Isolation- Internal SMD Construction- UL94V-0 Package Material- Toroidal Magnetics- Efficiency to 80%
BYV26SERIES Very low drop voltage regulators with inhibit
BYV26 ECONOLINE: RQS & RQD - 1kVDC Isolation- Internal SMD Construction- UL94V-0 Package Material- Toroidal Magnetics- Efficiency to 80%
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