參數(shù)資料
型號(hào): BYV133F
廠商: NXP SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: IC 32-BIT BUS SWITCH 80-BQSOP
中文描述: 20 A, 35 V, SILICON, RECTIFIER DIODE
文件頁(yè)數(shù): 3/5頁(yè)
文件大?。?/td> 31K
代理商: BYV133F
Philips Semiconductors
Product specification
Rectifier diodes
schottky barrier
BYV133F series
Fig.1. Maximum forward dissipation P
= f(I
) per
diode; square current waveform where
I
F(AV)
=I
F(RMS)
x
D.
Fig.2. Maximum forward dissipation P
= f(I
) per
diode; sinusoidal current waveform where a = form
factor = I
F(RMS)
/ I
F(AV)
.
Fig.3. Typical and maximum forward characteristic
I
F
= f(V
F
); parameter T
j
Fig.4. Typical reverse leakage current per diode;
I
R
= f(V
R
); parameter T
j
Fig.5. Typical junction capacitance per diode;
C
d
= f(V
R
); f = 1 MHz; T
j
= 25C to 125 C.
Fig.6. Transient thermal impedance; per diode;
Z
th j-hs
= f(t
p
).
0
5
10
15
0
2
4
6
8
10
12
D = 1.0
0.5
0.2
0.1
BYV133
IF(AV) / A
PF / W
Ths(max) / C
150
138
126
114
102
90
78
T
I
D =
t
p
t
p
T
t
Rs = 0.0220 Ohms
0
25
50
100
10
1
0.1
0.01
IR / mA
VR/ V
BYV133
Tj = 50 C
75 C
100 C
125 C
150 C
0
1
2
3
4
5
6
7
8
9
10
0
1
2
3
4
5
6
7
8
9
a = 1.57
1.9
2.2
2.8
4
BYV133
IF(AV) / A
PF / W
Rs = 0.022 Ohms
Ths(max) / C
150
144
138
132
126
120
114
108
102
96
1
10
100
10
1000
100
Cd / pF
VR / V
BYV133
0
0.2
0.4
0.6
VF / V
0.8
1
1.2
1.4
0
10
20
30
40
50
BYV133
IF / A
Tj = 25 C
Tj = 150 C
max
typ
10
1
0.1
0.01
10us
1ms
0.1s
10s
tp (s)
Zth j-hs (K/W)
P
D
t
p
t
August 1996
3
Rev 1.100
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