參數(shù)資料
型號: BYM26SERIES
元件分類: 基準電壓源/電流源
英文描述: Very low drop voltage regulators with inhibit
中文描述: 快速軟恢復控制雪崩整流器
文件頁數(shù): 3/12頁
文件大?。?/td> 70K
代理商: BYM26SERIES
1996 May 24
3
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYM26 series
ELECTRICAL CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
I
FRM
repetitive peak forward current
BYM26A to E
BYM26F and G
repetitive peak forward current
BYM26A to E
BYM26F and G
non-repetitive peak forward current
T
tp
= 55
°
C; see Figs 6 and 7
19
21
A
A
I
FRM
T
amb
= 65
°
C; see Figs 8 and 9
8.0
8.5
A
A
A
I
FSM
t = 10 ms half sine wave; T
j
= T
j max
prior to surge; V
R
= V
RRMmax
L = 120 mH; T
j
= T
j max
prior to surge;
inductive load switched off
45
E
RSM
non-repetitive peak reverse
avalanche energy
storage temperature
junction temperature
10
mJ
T
stg
T
j
65
65
+175
+175
°
C
°
C
see Figs 12 and 13
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
F
forward voltage
BYM26A to E
BYM26F and G
forward voltage
BYM26A to E
BYM26F and G
reverse avalanche breakdown
voltage
BYM26A
BYM26B
BYM26C
BYM26D
BYM26E
BYM26F
BYM26G
reverse current
I
F
= 2 A; T
j
= T
j max
;
see Figs 14 and 15
1.34
1.34
V
V
V
F
I
F
= 2 A;
see Figs 14 and 15
2.65
2.30
V
V
V
(BR)R
I
R
= 0.1 mA
300
500
700
900
1100
1300
1500
10
V
V
V
V
V
V
V
μ
A
I
R
V
R
= V
RRMmax
;
see Fig.16
V
R
= V
RRMmax
;
T
j
= 165
°
C; see Fig.16
when switched from
I
F
= 0.5 A to I
R
= 1 A;
measured at I
R
= 0.25 A;
see Fig.20
150
μ
A
t
rr
reverse recovery time
BYM26A to C
BYM26D and E
BYM26F and G
30
75
ns
ns
ns
150
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
相關PDF資料
PDF描述
BYM26C Fast soft-recovery controlled avalanche rectifiers(快速軟恢復可控雪崩整流器 (600V))
BYM26 INNOLINE: RP50-xxxxSB - Single Outputs up to 20A; Input/Output 1.6kVDC Isolation; Adjustable Output Voltage; No Minimum Load; Under -Voltage Lockout; Industry Standard Footprint; Fixed Operating Frequency; Halt Tested; Compact 36.83 x 57.91 x 12.7mm Package; High Efficiency
BYM26A INNOLINE: RP50-S - Single Outputs up to 15A- Input/Output 1.6kVDC Isolation- Adjustable Output Voltage- No Minimum Load- Under -Voltage Lockout- Industry Standard Footprint- Fixed Operating Frequency- Halt Tested- Compact 61.0 x 57.91 x 12.7mm Package- High Efficiency to
BYM26D INNOLINE: RP50-S - Single Outputs up to 15A- Input/Output 1.6kVDC Isolation- Adjustable Output Voltage- No Minimum Load- Under -Voltage Lockout- Industry Standard Footprint- Fixed Operating Frequency- Halt Tested- Compact 61.0 x 57.91 x 12.7mm Package- High Efficiency to
BYM26E INNOLINE: RP50-xxxxSB - Single Outputs up to 20A; Input/Output 1.6kVDC Isolation; Adjustable Output Voltage; No Minimum Load; Under -Voltage Lockout; Industry Standard Footprint; Fixed Operating Frequency; Halt Tested; Compact 36.83 x 57.91 x 12.7mm Package; High Efficiency
相關代理商/技術參數(shù)
參數(shù)描述
BYM300A120DN2 功能描述:分立半導體模塊 1200V 300A F/DIODE RoHS:否 制造商:Infineon Technologies 產品:Thyristor Power Modules 類型:Phase Controls 安裝風格:Screw 封裝 / 箱體:DT61 封裝:
BYM300A120DN2HOSA1 功能描述:MOD IGBT MED POWER 62MM-2 制造商:infineon technologies 系列:- 零件狀態(tài):在售 IGBT 類型:- 配置:單一 電壓 - 集射極擊穿(最大值):1200V 電流 - 集電極(Ic)(最大值):450A 功率 - 最大值:1000W 不同?Vge,Ic 時的?Vce(on):- 輸入:標準 NTC 熱敏電阻:無 工作溫度:150°C(TJ) 安裝類型:底座安裝 封裝/外殼:模塊 供應商器件封裝:模塊 標準包裝:10
BYM300A160DN13C_E3222 功能描述:IGBT 模塊 RoHS:否 制造商:Infineon Technologies 產品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
BYM300A170DN2 功能描述:分立半導體模塊 1700V 300A F/DIODE RoHS:否 制造商:Infineon Technologies 產品:Thyristor Power Modules 類型:Phase Controls 安裝風格:Screw 封裝 / 箱體:DT61 封裝:
BYM300B170DN2 功能描述:IGBT 模塊 N-CH 1.7KV 300A RoHS:否 制造商:Infineon Technologies 產品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: