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參數(shù)資料
| 型號： | BYG70SERIES |
| 元件分類： | 基準(zhǔn)電壓源/電流源 |
| 英文描述： | Very low drop voltage regulators with inhibit |
| 中文描述： | 快速軟恢復(fù)控制雪崩整流器 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 35K |
| 代理商： | BYG70SERIES |
1996 Jun 05
2
Philips Semiconductors
Preliminary specification
Fast soft-recovery
controlled avalanche rectifiers
BYG70 series
FEATURES
Glass passivated
High maximum operating
temperature
Low leakage current
Excellent stability
Guaranteed avalanche energy
absorption capability
UL 94V-O classified plastic
package
Shipped in 12 mm embossed tape.
DESCRIPTION
DO-214AC surface mountable
package with glass passivated chip.
The well-defined void-free case is of a
transfer-moulded thermo-setting
plastic.
Fig.1 Simplified outline (DO-214AC; SOD106) and symbol.
handbook, 4 columns
MSA474
Top view
Side view
cathode
band
k
a
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
RRM
repetitive peak reverse voltage
BYG70D
BYG70G
BYG70J
continuous reverse voltage
BYG70D
BYG70G
BYG70J
average forward current
200
400
600
V
V
V
V
R
200
400
600
1.00
V
V
V
A
I
F(AV)
averaged over any 20 ms period;
T
tp
= 100
°
C; see Fig.2
averaged over any 20 ms period;
Al
2
O
3
PCB mounting (see Fig.7);
T
amb
= 60
°
C; see Fig.3
averaged over any 20 ms period;
epoxy PCB mounting (see Fig.7);
T
amb
= 60
°
C; see Fig.3
t = 10 ms half sine wave;
T
j
= T
j max
prior to surge;
V
R
= V
RRMmax
L = 120 mH; T
j
= T
j max
prior to surge;
inductive load switched off
0.53
A
0.39
A
I
FSM
non-repetitive peak forward current
20
A
E
RSM
non-repetitive peak reverse
avalanche energy
storage temperature
10
mJ
T
stg
T
j
65
65
+175
°
C
°
C
junction temperature
see Fig.4
+175
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| BYG80C | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Ultra fast low-loss controlled avalanche rectifiers |
| BYG80D | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Ultra fast low-loss controlled avalanche rectifiers |
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