參數(shù)資料
型號: BYG60K
廠商: NXP SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: Fast soft-recovery controlled avalanche rectifiers(快速低損耗控制的雪崩整流器)
中文描述: 0.65 A, 800 V, SILICON, SIGNAL DIODE, DO-214AC
封裝: PLASTIC PACKAGE-2
文件頁數(shù): 3/8頁
文件大?。?/td> 55K
代理商: BYG60K
2000 Jul 03
3
Philips Semiconductors
Product specification
Fast soft-recovery
controlled avalanche rectifiers
BYG60 series
ELECTRICAL CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
THERMAL CHARACTERISTICS
Notes
1.
2.
Device mounted on Al
2
O
3
printed-circuit board, 0.7 mm thick; thickness of copper
35
μ
m, see Fig.7.
Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper
40
μ
m, see Fig.7.
For more information please refer to the ‘General Part of associated Handbook’
E
RSM
non-repetitive peak reverse
avalanche energy
BYG60D to J
BYG60K and M
storage temperature
junction temperature
L = 120 mH; T
j
= T
j max
prior to surge;
inductive load switched off
65
65
10
7
+175
+175
mJ
mJ
°
C
°
C
T
stg
T
j
see Fig.4
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
F
forward voltage
I
F
= 1 A; T
j
= T
j max;
see Fig.5
I
F
= 1 A; see Fig.5
I
R
= 0.1 mA
0.98
1.2
V
V
V
(BR)R
reverse avalanche
breakdown voltage
BYG60D
BYG60G
BYG60J
BYG60K
BYG60M
reverse current
300
500
700
900
1100
5
V
V
V
V
V
μ
A
I
R
V
R
= V
RRMmax
;
see Fig.6
V
R
= V
RRMmax
; T
j
= 165
°
C;
see Fig.6
when switched from I
F
= 0.5 A to
I
R
= 1 A; measured at I
R
= 0.25 A;
see Fig.8
100
μ
A
t
rr
reverse recovery time
BYG60D to J
BYG60K and M
diode capacitance
BYG60D to J
BYG60K and M
250
300
ns
ns
C
d
V
R
= 0 V; f = 1 MHz
30
25
pF
pF
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-tp
R
th j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
25
100
150
K/W
K/W
K/W
note 1
note 2
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
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