參數(shù)資料
型號: BYG26J
廠商: NXP SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: SMA ultra fast soft-recovery controlled avalanche rectifiers
中文描述: 1 A, 600 V, SILICON, SIGNAL DIODE, DO-214AC
封裝: PLASTIC PACKAGE-2
文件頁數(shù): 3/12頁
文件大?。?/td> 60K
代理商: BYG26J
2000 Feb 14
3
Philips Semiconductors
Product specification
SMA ultra fast soft-recovery
controlled avalanche rectifiers
BYG26 series
ELECTRICAL CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
THERMAL CHARACTERISTICS
Notes
1.
2.
Device mounted on Al
2
O
3
printed-circuit board, 0.7 mm thick; thickness of copper
35
μ
m.
Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper
40
μ
m. For more
information please refer to the ‘General Part of associated Handbook’
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
V
F
I
R
forward voltage
reverse current
I
F
= 1 A; see Fig.4
V
R
= V
RRMmax
; see Fig.5
V
R
= V
RRMmax
; T
j
= 165
°
C; see Fig.5
when switched from I
F
= 0.5 A to I
R
= 1 A;
measured at I
R
= 0.25 A; see Fig.9
V
R
= 4 V; f = 1 MHz; see Fig.6
3.6
5
100
30
V
μ
A
μ
A
ns
t
rr
reverse recovery time
C
d
diode capacitance
7
pF
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-tp
R
th j-a
thermal resistance from junction to tie-point; see Fig.7
thermal resistance from junction to ambient
27
100
150
K/W
K/W
K/W
note 1
note 2
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