參數(shù)資料
型號(hào)： BYD73E
廠商： NXP SEMICONDUCTORS
元件分類： 參考電壓二極管
英文描述： Ultra fast low-loss controlled avalanche rectifiers
中文描述： 0.95 A, 250 V, SILICON, SIGNAL DIODE
封裝： HERMETIC SEALED, GLASS PACKAGE-2
文件頁數(shù)： 4/11頁
文件大?。?/td> 63K
代理商： BYD73E
1996 Sep 18
4
Philips Semiconductors
Product specification
Ultra fast low-loss
controlled avalanche rectifiers
BYD73 series
THERMAL CHARACTERISTICS
Note
1.
Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer
≥
40
μ
m, see Fig.16.
For more information please refer to the “General Part of associated Handbook”.
C
d
diode capacitance
BYD73A to D
BYD73E to G
maximum slope of reverse recovery
current
BYD73A to D
BYD73E to G
f = 1 MHz; V
R
= 0 V;
see Fig.15
50
40
pF
pF
when switched from
I
F
= 1 A to V
R
≥
30 V
and dI
F
/dt =
1 A/
μ
s;
see Fig.17
4
5
A/
μ
s
A/
μ
s
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-tp
R
th j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
lead length = 10 mm
note 1
60
K/W
K/W
120
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
dI
R
dt
--------
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