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參數(shù)資料
| 型號： | BY428 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | PUBLICATIONS, BOOKS RoHS Compliant: NA |
| 中文描述： | 1500 V, SILICON, RECTIFIER DIODE |
| 封裝： | HERMETIC SEALED, GLASS PACKAGE-2 |
| 文件頁數(shù)： | 2/7頁 |
| 文件大小： | 52K |
| 代理商： | BY428 |
1996 Sep 26
2
Philips Semiconductors
Product specification
Damper diode
BY428
FEATURES
Glass passivated
High maximum operating
temperature
Low leakage current
Excellent stability
Available in ammo-pack
Also available with preformed leads
for easy insertion.
APPLICATIONS
Damper diode in high frequency
horizontal deflection circuits up to
64 kHz.
DESCRIPTION
Rugged glass package, using a high
temperature alloyed construction.
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
Fig.1 Simplified outline (SOD64) and symbol.
2/3 page (Datasheet)
MAM104
a
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
ELECTRICAL CHARACTERISTICS
T
j
= 25
°
C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
RSM
V
RRM
V
R
I
FWM
non-repetitive peak reverse voltage
repetitive peak reverse voltage
continuous reverse voltage
working peak forward current
1500
1500
1400
V
V
V
A
T
tp
= 80
°
C; lead length = 10 mm;
see Fig.2
4
I
FRM
I
FSM
repetitive peak forward current
non-repetitive peak forward current
8
A
A
t = 10 ms half sinewave;
T
j
= T
j max
prior to surge;
V
R
= V
RRMmax
50
T
stg
T
j
storage temperature
junction temperature
65
65
+175
+150
°
C
°
C
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
V
F
forward voltage
I
F
= 4 A; T
j
= T
j max
; see Fig.3
I
F
= 4 A; see Fig.3
V
R
= V
Rmax
; T
j
= 150
°
C
when switched from I
F
= 0.5 A to I
R
= 1 A;
measured at I
R
= 0.25 A; see Fig.6
when switched to I
F
= 5 A in 50 ns;
T
j
= T
j max
; see Fig.7
1.60
1.95
V
V
μ
A
ns
I
R
t
rr
reverse current
reverse recovery time
150
250
t
fr
forward recovery time
250
ns
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