BUZ72A
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTORS
I
TYPICAL R
DS(on)
= 0.23
I
AVALANCHE RUGGED TECHNOLOGY
I
100% AVALANCHE TESTED
I
REPETITIVE AVALANCHE DATA AT 100
o
C
I
LOW GATE CHARGE
I
HIGH CURRENT CAPABILITY
I
175
o
C OPERATING TEMPERATURE
APPLICATIONS
I
HIGH CURRENT, HIGH SPEED SWITCHING
I
SOLENOID AND RELAY DRIVERS
I
REGULATORS
I
DC-DC & DC-AC CONVERTERS
I
MOTOR CONTROL, AUDIO AMPLIFIERS
I
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
INTERNAL SCHEMATIC DIAGRAM
TYPE
V
DSS
R
DS(on)
< 0.25
I
D
BUZ72A
100 V
11 A
1
2
3
TO-220
June 1993
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
DS
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
100
V
V
DGR
100
±
20
11
V
V
GS
V
I
D
A
I
DM
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
44
A
P
tot
70
W
o
C
o
C
T
stg
Storage Temperature
-65 to 175
T
j
Max. Operating Junction Temperature
175
DIN Humidity Category (DIN 40040)
E
IEC Climatic Category (DIN IEC 68-1)
55/150/56
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