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參數(shù)資料
| 型號： | BUZ11 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-Channel 50V-0.03Ω-30A -TO-220 STripFETTM Power MOSFET(功率MOSFET) |
| 中文描述： | N溝道50V -0.03Ω- 30A條至220 STripFETTM功率MOSFET（功率MOSFET的） |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 48K |
| 代理商： | BUZ11 |
THERMAL DATA
Rthj-ca se
Thermal Resistance Junction-case
Max
1.67
oC/W
Rthj- amb
Thermal Resistance Junction-ambient
Max
62. 5
oC/W
AVALANCHE CHARACTERISTICS
Symb ol
Parameter
Value
Uni t
IAR
Avalanche Current, Repetitive or Not -Repet itive
(pulse width limited by Tj max,
δ <1%)
30
A
EAS
Single Pulse Avalanche Energy
(starting Tj =25
oC, ID =IAR,VDD =25 V)
200
mJ
ELECTRICAL CHARACTERISTICS (Tcase =25
oC unless otherwise specified)
OFF
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
V(BR)DSS
Drain-source
Breakdown Volt age
ID =250
AVGS =0
50
V
IDSS
Zero G ate Voltage
Drain Current (VGS =0)
VDS =Max Rating
Tj =125
oC
1
10
A
IGSS
Gate-body Leakage
Current (VDS =0)
VGS =
± 20 V
± 100
nA
ON (
)
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
VGS(th)
Gate Threshold
Voltage
VDS =VGS
ID = 1 mA
2. 1
34V
RDS(on)
St atic Drain-source On
Resistance
VGS =10V
ID = 19 A
0. 03
0.04
DYNAMIC
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
gfs (
)Forward
Transconduct ance
VDS =15 V
ID =19 A
10
17
S
Ciss
Coss
Crss
Input Capacitance
Output Capacit ance
Reverse T ransfer
Capacitance
VDS =25 V
f = 1 MHz
VGS = 0
2100
260
65
pF
SWITCHING
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
td(on)
tr
td(off)
tf
Turn-on Time
Rise Time
Turn-off Delay Time
Fall Time
VDD =30 V
ID =18 A
RGS =50
VGS =10 V
40
200
220
110
ns
BUZ11
2/6
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BUZ11"NR4941 | 制造商:Fairchild Semiconductor Corporation 功能描述:N CH MOSFET 50V 30A TO-220AB 制造商:Fairchild Semiconductor Corporation 功能描述:N CH MOSFET, 50V, 30A, TO-220AB |
| BUZ11_NR4941 | 功能描述:MOSFET N-Channel 50V 33A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUZ11_R4941 | 功能描述:MOSFET TO220 50V 30A N-CH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUZ11_R4941_Q | 功能描述:MOSFET TO220 50V 30A N-CH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUZ110S | 制造商:Siemens 功能描述:80 A, 55 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 |
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