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參數資料
| 型號： | BUZ10 |
| 廠商： | 意法半導體 |
| 英文描述： | N-Channel 50V-0.06Ω-23A -TO-220 STripFETTM Power MOSFET(功率MOSFET) |
| 中文描述： | N溝道50V -0.06Ω- 23A條至220 STripFETTM功率MOSFET（功率MOSFET的） |
| 文件頁數： | 2/6頁 |
| 文件大小： | 42K |
| 代理商： | BUZ10 |
THERMAL DATA
Rthj-case
Rthj-amb
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
2. 0
62. 5
oC/W
AVALANCHE CHARACTERISTICS
Symbo l
Parameter
Valu e
Unit
IAR
Avalanche Current , Repet itive or Not-Repet itive
(pulse width limited by Tj max,
δ <1%)
23
A
EAS
Single Pulse Avalanche Energy
(starting Tj =25
oC, ID =IAR,VDD =30 V)
70
mJ
ELECTRICAL CHARACTERISTICS (Tcase =25
oC unless otherwise specified)
OFF
Symbo l
Parameter
Test Con ditions
Min.
T yp.
Max.
Unit
V(BR)DSS
Drain-source
Breakdown Voltage
ID =250
AVGS =0
50
V
IDSS
Zero G ate Voltage
Drain Current (VGS =0)
VDS =Max Rating
VDS = Max Rating
Tj =125
oC
1
10
A
IGSS
Gat e-body Leakage
Current (VDS =0)
VGS =
± 20 V
± 100
nA
ON (
)
Symbo l
Parameter
Test Con ditions
Min.
T yp.
Max.
Unit
VGS(th)
Gat e Threshold
Voltage
VDS =VGS
ID =1 mA
2. 1
3
4
V
RDS(on)
Static Drain-source O n
Resist ance
VGS =10V
ID = 14 A
0.06
0.07
DYNAMIC
Symbo l
Parameter
Test Con ditions
Min.
T yp.
Max.
Unit
gfs (
)Forward
Transconduct ance
VDS =25 V
ID =14 A
6
11
S
Ciss
Cos s
Crss
Input Capacitance
Out put Capacitance
Reverse T ransfer
Capacitance
VDS =25 V
f = 1 MHz
VGS =0
900
130
40
pF
SWITCHING
Symbo l
Parameter
Test Con ditions
Min.
T yp.
Max.
Unit
td(on)
tr
td(off)
tf
Turn-on Time
Rise Time
Turn-off Delay Time
Fall Time
VDD =30 V
ID =10 A
RGS =4. 7
VGS =10 V
20
45
48
10
ns
BUZ10
2/6
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