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參數(shù)資料
| 型號： | BUY49S |
| 廠商： | 意法半導體 |
| 英文描述： | Silicon NPN Transistor(硅NPN晶體管) |
| 中文描述： | 硅NPN晶體管（硅npn型晶體管） |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 66K |
| 代理商： | BUY49S |
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-case Max
Thermal Resistance Junction-case-ambient Max
15
175
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CBO
Collector Cut-off
Current (I
E
= 0 )
V
CB
= 200 V
V
CB
= 200 V T
case
= 150
o
C
I
C
= 100
μ
A
0.1
50
μ
A
μ
A
V
(BR)CBO
*
Collector-Base
Breakdown Voltage
(I
E
= 0 )
250
V
V
CEO(sus)
* Collector-Emitter
Sustaining Voltage
(I
B
= 0)
V
EBO
*
Emitter-base Voltage
(I
C
= 0)
V
CE(sat)
*
Collector-Emitter
Saturation Voltage
I
C
= 20 mA
200
V
I
E
= 1 mA
6
V
I
C
= 0.5 A I
B
= 50 mA
0.2
V
V
BE(sat)
*
Collector-Emitter
Saturation Voltage
I
C
= 0.5 A I
B
= 50 mA
1.1
V
h
FE
*
DC Current Gain
I
C
= 20 mA V
CE
= 5 V
I
C
= 0.5 A V
CE
= 5 V
I
C
= 20 mA V
CE
= 2 V
T
case
= - 55
o
C
I
C
= 100 mA V
CE
= 10 V
I
E
= 0 V
CB
= 10 V
f
= 1 MHz
I
C
= 0.5 A V
CC
= 20 V
40
40
16
80
f
T
Transistor Frequency
50
MHz
C
CBO
Collector-base
Capacitance
Turn-on Time
30
pF
t
on
0.3
μ
s
μ
s
A
t
off
Turn-off Time
I
B1
= - I
B2
= 50 mA
1
I
s/b
**
Second Breakdown
Collector Current
V
CE
= 50 V
0.2
Pulsed: Pulse duration = 300
μ
s, duty cycle = 1.5 %
Pulsed: 1 s, non repetitive pulse.
BUY49S
2/4
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相關代理商/技術參數(shù) |
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|---|---|
| BUY49S_01 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:SILICON NPN TRANSISTOR |
| BUY50 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:Bipolar NPN Device in a Hermetically sealed TO3 Metal Package |
| BUY51 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 30A I(C) | TO-210AC |
| BUY51A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 30A I(C) | TO-3 |
| BUY52 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 30A I(C) | TO-210AC |
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